Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
GaN thin films on z- and x-cut LiNbO3 substrates by MOVPE
Georgia Institute of Technology, Metz, France.
University of Metz and Supelec, France.
KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
University of Metz and Supelec, France.
Show others and affiliations
2008 (English)In: PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS: VOL 5, NO 6 / [ed] Palacios T.; Jena D., 2008, Vol. 5, 1565-1567 p.Conference paper, Published paper (Refereed)
Abstract [en]

We report epitaxial growth of GaN layers on z- and x-cut LiNbO3 substrates using MOVPE. GaN layers with the thickness of 450 nm were characterized using X-ray diffraction. For both, z- and x-cut orientations of LiNbO3 substrates, the GaN layers have c-axis orientation normal to the substrate plane and the in-plane lattice orientation of GaN layers coincides with the primary axes of LiNbO3 substrates. Although GaN layers exhibit almost complete strain relaxation, the residual compressive strain determined with respect to a freestanding GaN is of the order of +0.37% and +0.2% for z- and x-cut substrates, respectively.

Place, publisher, year, edition, pages
2008. Vol. 5, 1565-1567 p.
Series
PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, ISSN 1610-1634 ; Volume: 5, Issue: 6
Keyword [en]
C-axis orientations; Compressive strain; Freestanding GaN; GaN layers; GaN thin films; In-plane lattices; MOVPE; Substrate planes, Gallium nitride; Metallorganic vapor phase epitaxy; Semiconductor growth; Substrates; X ray diffraction, Gallium alloys
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-13703DOI: 10.1002/pssc.200778490ISI: 000256695700027Scopus ID: 2-s2.0-50849143992OAI: oai:DiVA.org:kth-13703DiVA: diva2:326638
Conference
7th International Conference on Nitride Semiconductors (ICNS-7), Las Vegas, NV, SEP 16-21, 2007
Note
QC 20100623Available from: 2010-06-23 Created: 2010-06-23 Last updated: 2010-06-23Bibliographically approved
In thesis
1. Gallium nitride templates and its related materials for electronic and photonic devices
Open this publication in new window or tab >>Gallium nitride templates and its related materials for electronic and photonic devices
2008 (English)Doctoral thesis, comprehensive summary (Other scientific)
Abstract [en]

 

Place, publisher, year, edition, pages
Stockholm: KTH, 2008. xiv, 89 p.
Series
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2008:8
Keyword
GaN, heteroepitaxy of GaN, BGaAlN, Fe doped GaN, HEMT, carrier capture cross section, intersubband transition modulator
National Category
Materials Engineering
Identifiers
urn:nbn:se:kth:diva-4759 (URN)978-91-7178-981-5 (ISBN)
Public defence
2008-06-05, N2, Electrum 3, Isafjordsgatan 28 A/D, Kista, 10:15
Opponent
Supervisors
Note
QC 20100623Available from: 2008-05-16 Created: 2008-05-16 Last updated: 2010-09-20Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Aggerstam, Thomas
By organisation
Electrum Laboratory, ELAB
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 49 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf