GaN thin films on z- and x-cut LiNbO3 substrates by MOVPE
2008 (English)In: PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS: VOL 5, NO 6 / [ed] Palacios T.; Jena D., 2008, Vol. 5, 1565-1567 p.Conference paper (Refereed)
We report epitaxial growth of GaN layers on z- and x-cut LiNbO3 substrates using MOVPE. GaN layers with the thickness of 450 nm were characterized using X-ray diffraction. For both, z- and x-cut orientations of LiNbO3 substrates, the GaN layers have c-axis orientation normal to the substrate plane and the in-plane lattice orientation of GaN layers coincides with the primary axes of LiNbO3 substrates. Although GaN layers exhibit almost complete strain relaxation, the residual compressive strain determined with respect to a freestanding GaN is of the order of +0.37% and +0.2% for z- and x-cut substrates, respectively.
Place, publisher, year, edition, pages
2008. Vol. 5, 1565-1567 p.
, PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, ISSN 1610-1634 ; Volume: 5, Issue: 6
C-axis orientations; Compressive strain; Freestanding GaN; GaN layers; GaN thin films; In-plane lattices; MOVPE; Substrate planes, Gallium nitride; Metallorganic vapor phase epitaxy; Semiconductor growth; Substrates; X ray diffraction, Gallium alloys
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-13703DOI: 10.1002/pssc.200778490ISI: 000256695700027ScopusID: 2-s2.0-50849143992OAI: oai:DiVA.org:kth-13703DiVA: diva2:326638
7th International Conference on Nitride Semiconductors (ICNS-7), Las Vegas, NV, SEP 16-21, 2007
QC 201006232010-06-232010-06-232010-06-23Bibliographically approved