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Maskless selective electrochemically assisted wet etching of metal layers for 3D micromachined SOI RF MEMS devices
KTH, School of Electrical Engineering (EES), Microsystem Technology.
KTH, School of Electrical Engineering (EES), Microsystem Technology.
KTH, School of Electrical Engineering (EES), Microsystem Technology.ORCID iD: 0000-0001-9552-4234
KTH, School of Electrical Engineering (EES), Microsystem Technology.
2008 (English)In: MEMS 2008: 21ST IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST, New York: IEEE , 2008, 383-386 p.Conference paper, Published paper (Refereed)
Abstract [en]

This paper presents a novel method for selective local removal of metal layers using maskless, electrochemically assisted wet etching. This method has been developed, investigated and successfully applied to the fabrication of three-dimensional micromachined silicon-on-insulator-based radio-frequency transmission lines with embedded laterally actuated microswitches, consisting of a silicon core covered by a gold metallization layer. The full-wafer sputtered metallization layer must be locally removed to guarantee a well defined, low-reflections and low-loss signal propagation in the transmission line. Gold areas to be etch are exposed to a 1.2 V potential difference to a saturated calomel reference electrode in a NaCl(aq) solution. Further, the selective removal of the metallization on the stoppers of laterally moving electrostatic actuators has been shown to drastically reduce the mechanical wear on the stopper tip.

Place, publisher, year, edition, pages
New York: IEEE , 2008. 383-386 p.
Series
PROCEEDINGS: IEEE MICRO ELECTRO MECHANICAL SYSTEMS, ISSN 1084-6999
Keyword [en]
Actuators; Bandpass filters; Composite micromechanics; Electric lines; Electrochemical electrodes; Electrostatic actuators; Etching; Gold; Mechanical engineering; Mechanics; Mechatronics; MEMS; Metal recovery; Metallizing; Metals; Nonmetals; Optical design; Power transmission; Radio broadcasting; Radio transmission; Reactive ion etching; Silicon; Silicon wafers; Sodium chloride; Three dimensional; Transmission line theory; Wet etching
National Category
Information Science
Identifiers
URN: urn:nbn:se:kth:diva-13767DOI: 10.1109/MEMSYS.2008.4443673ISI: 000253356900096Scopus ID: 2-s2.0-50149093285ISBN: 1084-6999 978-1-4244-1792-6 (print)OAI: oai:DiVA.org:kth-13767DiVA: diva2:327202
Conference
21st IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2008) Tucson, AZ, JAN 13-17, 2008
Note
QC 20111013Available from: 2010-06-28 Created: 2010-06-28 Last updated: 2012-01-10Bibliographically approved

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Stemme, Göran

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