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LOW-TEMPERATURE CMOS-COMPATIBLE 3D-INTEGRATION OF MONOCRYSTALLINE-SILICON BASED PZT RF MEMS SWITCH ACTUATORS ON RF SUBSTRATES
KTH, School of Electrical Engineering (EES), Microsystem Technology.
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2010 (English)In: MEMS 2010: 23RD IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST, New York: Ieee , 2010, 47-50 p.Conference paper, Published paper (Refereed)
Abstract [en]

This paper presents a low temperature (200 degrees C) CMOS-compatible fabrication process for integrating high-temperature deposited lead zirconate titanate (PZT) on this film monocrystalline-silicon piezoelectric actuators, onto an RF substrate, and successful demonstration of this process for fabrication of metal-contact RF-MEMS switches. The patterned PZT/silicon multi-layer stack is transfer-bonded from a silicon-on-insulator (SOI) donor wafter to AF-45 glass RF substrate using adhesive wafer transfer bonding. Furthermore, several strategies have been investigate to drastically reduce the post bonding misalignment created by the shear forces between the bonding chucks during wafer bonding.

Place, publisher, year, edition, pages
New York: Ieee , 2010. 47-50 p.
Series
PROCEEDINGS: IEEE MICRO ELECTRO MECHANICAL SYSTEMS, ISSN 1084-6999
Keyword [en]
films
National Category
Information Science
Identifiers
URN: urn:nbn:se:kth:diva-13787ISI: 000278416400010Scopus ID: 2-s2.0-77952748558ISBN: 1084-6999 978-1-4244-5764-9 (print)OAI: oai:DiVA.org:kth-13787DiVA: diva2:327268
Conference
23rd IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2010) Hong Kong, PEOPLES R CHINA, JAN 24-28, 2010
Note
Qc 20110214Available from: 2010-06-28 Created: 2010-06-28 Last updated: 2011-02-14Bibliographically approved

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Niklaus, FrankStemme, Göran

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CiteExportLink to record
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Citation style
  • apa
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