RF characterization of low-voltage high-isolation MEMS series switch based on a S-shaped film actuator
2003 (English)In: PROCEEDINGS OF THE INTERNATIONAL 2003 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE - IMOC 2003: VOLS I AND II / [ed] Kalinowski HJ; Romero MA; Barbin SE, New York: Ieee , 2003, 537-540 p.Conference paper (Refereed)
This paper presents on an electrostatically actuated microelectromechanical series switch for DC to RF signals, based on a flexible S-shaped film actuator moving between two electrodes in touch mode actuation. This novel concept, in contrast to most other MEMS switches, allows a low actuation voltage design independent on the off-state gap height, which makes larger switching contact areas for low insertion loss and higher current handling capability possible, by obtaining high isolation. Furthermore, the double anchor principle avoids self-biasing and is favorable of switching higher power signals. The actuation voltages of the first prototype switches are 12 V to open and 15.8 V to close the metal contact. The RF isolation with a gap distance of 14.2 mum is better than -45 dB up to 2 GHz and -30 dB at 15 GHz despite a large switching contact area of 3500 mum(2).
Place, publisher, year, edition, pages
New York: Ieee , 2003. 537-540 p.
broadband switches, microwave switches, millimeter wave switches, RF, MEMS
IdentifiersURN: urn:nbn:se:kth:diva-13797ISI: 000189409000096ISBN: 0-7803-7824-5OAI: oai:DiVA.org:kth-13797DiVA: diva2:327338
10th International Microwave and Optoelectronics Conference (IMOC) Iguazu Falls, BRAZIL, SEP 20-23, 2003
Qc 2010-06-292010-06-292010-06-292010-06-29Bibliographically approved