Ultraviolet photoconductivity of pure and Al doped ZnO thin films by inkjet printing
2009 (English)In: NOVEL MATERIALS AND DEVICES FOR SPINTRONICS / [ed] Sanvito S, Heinonen O, Dediu VA, Rizzo N, Warrendale, PA: MATERIALS RESEARCH SOCIETY , 2009, Vol. 1183, 133-138 p.Conference paper (Refereed)
Pure ZnO, and Al doped ZnO, 120-300 nm thin films on glass substrates, were synthesized by inkjet printing technique using zinc and aluminum acetate solution as precursors and a two stage heat treatment process to obtain polycrystalline hexagonal wurtzite structure with the mean grain size of 25 and 30 nm respectively. All films exhibit a transmittance above 85-90% in the visible wavelength range below 700 nm. In the Al doped films the UV absorption spectra show a strong absorption onset below 380nm followed by shoulders centered around 325 nm depending on the film thickness. The electrical conductivity of Al doped ZnO thin films is larger by two orders of magnitude than that for pure ZnO films while the photoconductivity increases by about three orders of magnitude under UV irradiation. The photoresponse of the films with UV irradiation in terms of the rise and decay times in the frequency range from 5 to 500 Hz is also presented and discussed.
Place, publisher, year, edition, pages
Warrendale, PA: MATERIALS RESEARCH SOCIETY , 2009. Vol. 1183, 133-138 p.
, Materials Research Society Symposium Proceedings, ISSN 0272-9172 ; 1183
Absorption onset; Acetate solutions; Al doped; Al doped ZnO thin films; Al-doped ZnO; Decay time
IdentifiersURN: urn:nbn:se:kth:diva-13956DOI: 10.1557/PROC-1161-I03-22ISI: 000284863300020ScopusID: 2-s2.0-77951016000OAI: oai:DiVA.org:kth-13956DiVA: diva2:328621
Symposium on Novel Materials and Devices for Spintronics San Francisco, CA, APR 14-17, 2009