Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
1.3 um InGaAs VCSELs: Influence of the Large Gain-Cavity Detuning on the Modulation and Static Performance
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101). (Photonics)
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101). (Photonics)ORCID iD: 0000-0003-3056-4678
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. (Photonics)
Show others and affiliations
2004 (English)In: Proc. of 30th European Conference on Optical Communication 2004, 2004Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
2004.
National Category
Atom and Molecular Physics and Optics Telecommunications
Identifiers
URN: urn:nbn:se:kth:diva-14004OAI: oai:DiVA.org:kth-14004DiVA: diva2:329012
Conference
European Conference on Optical Communication
Note

ECOC 2004, Stockholm, Sweden, pp. Th2_4_2 QC 20100707. QC 20160222

Available from: 2010-07-07 Created: 2010-07-07 Last updated: 2016-02-22Bibliographically approved
In thesis
1. Dynamic Characterization of Semiconductor Lasers and Intensity Modulators
Open this publication in new window or tab >>Dynamic Characterization of Semiconductor Lasers and Intensity Modulators
2009 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

The research work presented in this thesis deals with characterization ofdynamics of active photonic devices that are based on semiconductormaterials. The thesis contains an introduction and a collection of publishedarticles in peer reviewed international journals and conferences.The introduction starts with the physical background and a review of thesemiconductor material properties which both affects the design andfabrication of the devices and determine their performance in applicationssuch as wavelength, optical power and attenuation, drive current andvoltage, temperature sensitivity and modulation bandwidth.The next chapter of the introduction is dedicated to various kinds ofsemiconductor lasers. It describes the physical principles, steady stateoperation and the dynamical response. The laser is essentially an opticalcavity consisting of a material with optical gain inbetween two reflectivemirrors. Special attention is given to the spectral shape of the mirrorreflectivity and its effect on the laser dynamics and how these effects canbe distinguished from those of the gain material.In order to improve dynamic performance, it is common that the laser,instead of being directly modulated by varying the drive current, isconnected to a separate modulator. The next chapter is therefore devotedto electroabsorption modulators for high speed intensity modulation andtheir integration to lasers. In order to fully take advantage of the highintrinsic modulation bandwidth of these devices it is important to havea good microwave design to avoid electrical parasitics. A segmented paddesign to achieve this is briefly described.The last part of the introduction covers measurements techniques that wereimplemented to experimentally investigate above devices. A description ofthe measurement methods, including practical hints and methods forevaluation of the measured results are provided.

Place, publisher, year, edition, pages
Stockholm: KTH, 2009. xii, 72 p.
Series
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2009:8
National Category
Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:kth:diva-11149 (URN)
Public defence
2009-09-30, KTH-Electrum, sal/ hall C2, Isafjordsgatan 26, Kista, 10:00 (English)
Opponent
Supervisors
Note
QC 20100707Available from: 2009-09-22 Created: 2009-09-22 Last updated: 2010-07-21Bibliographically approved

Open Access in DiVA

No full text

Authority records BETA

Schatz, RichardHammar, MattiasSundgren, Petrus

Search in DiVA

By author/editor
Chacinski, MarekBerggren, JesperSchatz, RichardKjebon, OlleHammar, MattiasSundgren, PetrusMarcks von Würtemberg, Rikard
By organisation
Microelectronics and Information Technology, IMITMicroelectronics and Applied Physics, MAPPhotonics (Closed 20120101)
Atom and Molecular Physics and OpticsTelecommunications

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 175 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf