Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Impact of losses in the Bragg section on the dynamics of detuned loaded DBR lasers
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.ORCID iD: 0000-0003-3056-4678
2010 (English)In: IEEE Journal of Quantum Electronics, ISSN 0018-9197, E-ISSN 1558-1713, Vol. 46, no 9, 1360-1367 p.Article in journal (Refereed) Published
Abstract [en]

The dynamics of a distributed Bragg reflector laser with optical losses in the Bragg section is studied in detail. It is found that the modulation response depends not only on the detuning of the lasing wavelength from the Bragg reflectivity peak but also on the magnitude of the waveguide losses in the Bragg section. Depending on the losses, the damping of the relaxation peak can either increase or decrease when the laser is detuned on the long wavelength flank of the Bragg peak. Hence, in order to achieve maximum modulation bandwidth of the laser, the laser needs not only to have the correct detuning but also an optimized waveguide loss in the Bragg section. The physical reason for this dependence is discussed in terms of a modified rate equation model.

Place, publisher, year, edition, pages
2010. Vol. 46, no 9, 1360-1367 p.
Keyword [en]
Direct modulation, distributed Bragg reflector (DBR) laser, external cavity, semiconductor laser diode
National Category
Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:kth:diva-14005DOI: 10.1109/JQE.2010.2048013ISI: 000282564000005Scopus ID: 2-s2.0-77955133987OAI: oai:DiVA.org:kth-14005DiVA: diva2:329054
Note
QC 20100707. Uppdaterad från manuskript till artikel (20101203).Available from: 2010-07-07 Created: 2010-07-07 Last updated: 2017-12-12Bibliographically approved
In thesis
1. Dynamic Characterization of Semiconductor Lasers and Intensity Modulators
Open this publication in new window or tab >>Dynamic Characterization of Semiconductor Lasers and Intensity Modulators
2009 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

The research work presented in this thesis deals with characterization ofdynamics of active photonic devices that are based on semiconductormaterials. The thesis contains an introduction and a collection of publishedarticles in peer reviewed international journals and conferences.The introduction starts with the physical background and a review of thesemiconductor material properties which both affects the design andfabrication of the devices and determine their performance in applicationssuch as wavelength, optical power and attenuation, drive current andvoltage, temperature sensitivity and modulation bandwidth.The next chapter of the introduction is dedicated to various kinds ofsemiconductor lasers. It describes the physical principles, steady stateoperation and the dynamical response. The laser is essentially an opticalcavity consisting of a material with optical gain inbetween two reflectivemirrors. Special attention is given to the spectral shape of the mirrorreflectivity and its effect on the laser dynamics and how these effects canbe distinguished from those of the gain material.In order to improve dynamic performance, it is common that the laser,instead of being directly modulated by varying the drive current, isconnected to a separate modulator. The next chapter is therefore devotedto electroabsorption modulators for high speed intensity modulation andtheir integration to lasers. In order to fully take advantage of the highintrinsic modulation bandwidth of these devices it is important to havea good microwave design to avoid electrical parasitics. A segmented paddesign to achieve this is briefly described.The last part of the introduction covers measurements techniques that wereimplemented to experimentally investigate above devices. A description ofthe measurement methods, including practical hints and methods forevaluation of the measured results are provided.

Place, publisher, year, edition, pages
Stockholm: KTH, 2009. xii, 72 p.
Series
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2009:8
National Category
Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:kth:diva-11149 (URN)
Public defence
2009-09-30, KTH-Electrum, sal/ hall C2, Isafjordsgatan 26, Kista, 10:00 (English)
Opponent
Supervisors
Note
QC 20100707Available from: 2009-09-22 Created: 2009-09-22 Last updated: 2010-07-21Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Authority records BETA

Schatz, Richard

Search in DiVA

By author/editor
Chacinski, MarekSchatz, Richard
By organisation
Microelectronics and Applied Physics, MAPPhotonics
In the same journal
IEEE Journal of Quantum Electronics
Atom and Molecular Physics and Optics

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 140 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf