Transition from ferromagnetism to diamagnetism in undoped ZnO thin films
2009 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 95, no 3Article in journal (Refereed) Published
We report a systematic study of the film thickness dependence (0.1-1 mu m) of room-temperature ferromagnetism in pure magnetron-sputtered ZnO thin films wherein a sequential transition from ferromagnetism to paramagnetism and diamagnetism as a function of film thickness is observed. The highest saturation magnetization (M-S) value observed is 0.62 emu/g (0.018 mu(B)/unit cell) for a similar to 480 nm film. On doping the ZnO film with 1 at. % Mn enhances the M-S value by 26%. The ferromagnetic order in ZnO matrix is believed to be defect induced. In addition, on doping with Mn hybridization between the 2p states of O and the 3d states of Mn occurs.
Place, publisher, year, edition, pages
2009. Vol. 95, no 3
diamagnetic materials, ferromagnetic materials, ferromagnetic-paramagnetic transitions, II-VI semiconductors, magnetic semiconductors, magnetic thin films, manganese, paramagnetic materials, semiconductor doping, semiconductor thin films, spontaneous magnetisation, sputter deposition, zinc compounds
IdentifiersURN: urn:nbn:se:kth:diva-14173DOI: 10.1063/1.3180708ISI: 000268405300055ScopusID: 2-s2.0-67749124267OAI: oai:DiVA.org:kth-14173DiVA: diva2:331398
QC 201007222010-07-222010-07-222011-03-21Bibliographically approved