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Ni-salicided CMOS with a poly-SiGe/Al2O3/HfO2/Al2O3 gate stack
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2005 (English)In: Microelectronic Engineering, ISSN 0167-9317, E-ISSN 1873-5568, Vol. 77, no 1, p. 36-41Article in journal (Refereed) Published
Abstract [en]

Ni-salicided MOSFETs with a gate stack of ALD Al2O3/HfO2/Al2O3 high-x dielectric and poly-SiGe gate electrode were fabricated. The Si pMOSFETs with an EOT of 1.7 nm showed an expected gate leakage current reduction compared to SiO2 with the same EOT and a mobility around 20% lower than the universal curve. The strained SiGe surface-channel pMOSFETs with the same gate stack showed an enhanced current drive and hole mobility. The Si nMOSFETs, however, exhibited a degraded subthreshold slope and a lower current drive even compared with the Si pMOSFETs. Possible reasons for the degradation of Si nMOSFETs were discussed.

Place, publisher, year, edition, pages
2005. Vol. 77, no 1, p. 36-41
Keyword [en]
high-kappa, poly-SiGe, MOSFET, atomic layer deposition, strained SiGe, dielectrics
Identifiers
URN: urn:nbn:se:kth:diva-14431DOI: 10.1016/j.mee.2004.08.004ISI: 000225729800007Scopus ID: 2-s2.0-9644302670OAI: oai:DiVA.org:kth-14431DiVA, id: diva2:332472
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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Hellström, Per-Erik

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Hellström, Per-ErikÖstling, MikaelZhang, Shi-Li
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