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Ni-salicided CMOS with a poly-SiGe/Al2O3/HfO2/Al2O3 gate stack
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2005 (English)In: Microelectronic Engineering, ISSN 0167-9317, Vol. 77, no 1, 36-41 p.Article in journal (Refereed) Published
Abstract [en]

Ni-salicided MOSFETs with a gate stack of ALD Al2O3/HfO2/Al2O3 high-x dielectric and poly-SiGe gate electrode were fabricated. The Si pMOSFETs with an EOT of 1.7 nm showed an expected gate leakage current reduction compared to SiO2 with the same EOT and a mobility around 20% lower than the universal curve. The strained SiGe surface-channel pMOSFETs with the same gate stack showed an enhanced current drive and hole mobility. The Si nMOSFETs, however, exhibited a degraded subthreshold slope and a lower current drive even compared with the Si pMOSFETs. Possible reasons for the degradation of Si nMOSFETs were discussed.

Place, publisher, year, edition, pages
2005. Vol. 77, no 1, 36-41 p.
Keyword [en]
high-kappa, poly-SiGe, MOSFET, atomic layer deposition, strained SiGe, dielectrics
Identifiers
URN: urn:nbn:se:kth:diva-14431DOI: 10.1016/j.mee.2004.08.004ISI: 000225729800007Scopus ID: 2-s2.0-9644302670OAI: oai:DiVA.org:kth-14431DiVA: diva2:332472
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05Bibliographically approved

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Hellström, Per-Erik

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