Change search
ReferencesLink to record
Permanent link

Direct link
A 4-mb toggle MRAM based on a novel bit and switching method
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
Show others and affiliations
2005 (English)In: IEEE transactions on magnetics, ISSN 0018-9464, E-ISSN 1941-0069, Vol. 41, no 1, 132-136 p.Article in journal (Refereed) Published
Abstract [en]

4-Mb magnetoresistive random access memory (MRAM) with a novel magnetic bit cell and toggle switching mode is presented. The circuit was designed in a five level metal, 0.18-mum complementary metal-oxide-semiconductor process with a bit cell size of 1.55 mum(2). The new bit cell uses a balanced synthetic antiferromagnetic free layer and a phased write pulse sequence to provide robust switching performance with immunity from half-select disturbs. This switching mode greatly improves the operational performance of the MRAM as compared to conventional MRAM. A detailed description of this 4-Mb toggle MRAM is presented.

Place, publisher, year, edition, pages
2005. Vol. 41, no 1, 132-136 p.
Keyword [en]
magnetic film memories, magnetic tunnel junction, magnetoresistive device, magnetoresistive random access memory (MRAM), micromagnetic switching, MRAM integration, random access memories (RAMs)
URN: urn:nbn:se:kth:diva-14464DOI: 10.1109/TMAG.2004.840847ISI: 000226342200017OAI: diva2:332505
QC 20100525Available from: 2010-08-05 Created: 2010-08-05Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Åkerman, Johan
By organisation
Microelectronics and Applied Physics, MAP
In the same journal
IEEE transactions on magnetics

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 34 hits
ReferencesLink to record
Permanent link

Direct link