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A 4-mb toggle MRAM based on a novel bit and switching method
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
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2005 (English)In: IEEE transactions on magnetics, ISSN 0018-9464, E-ISSN 1941-0069, Vol. 41, no 1, 132-136 p.Article in journal (Refereed) Published
Abstract [en]

4-Mb magnetoresistive random access memory (MRAM) with a novel magnetic bit cell and toggle switching mode is presented. The circuit was designed in a five level metal, 0.18-mum complementary metal-oxide-semiconductor process with a bit cell size of 1.55 mum(2). The new bit cell uses a balanced synthetic antiferromagnetic free layer and a phased write pulse sequence to provide robust switching performance with immunity from half-select disturbs. This switching mode greatly improves the operational performance of the MRAM as compared to conventional MRAM. A detailed description of this 4-Mb toggle MRAM is presented.

Place, publisher, year, edition, pages
2005. Vol. 41, no 1, 132-136 p.
Keyword [en]
magnetic film memories, magnetic tunnel junction, magnetoresistive device, magnetoresistive random access memory (MRAM), micromagnetic switching, MRAM integration, random access memories (RAMs)
Identifiers
URN: urn:nbn:se:kth:diva-14464DOI: 10.1109/TMAG.2004.840847ISI: 000226342200017OAI: oai:DiVA.org:kth-14464DiVA: diva2:332505
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05Bibliographically approved

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