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Halogen n-type doping of chalcopyrite semiconductors
2005 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 86, no 4Article in journal (Refereed) Published
Abstract [en]

We theoretically identify the chemical thermodynamic boundary conditions that will produce n-type CuInSe2 via halogen doping. Remarkably, we find that due to the low formation energies of the intrinsic defects, V-Cu and In-Cu in CuInSe2, the growth conditions that maximize the halogen donor incorporation do not yield n-type conductivity, whereas the conditions that maximize the concentration of the intrinsic donor In-Cu do yield n-type conductivity. Under the latter conditions, however, the contribution of the halogen donors to the net donor concentration stays significantly below that of In-Cu.

Place, publisher, year, edition, pages
2005. Vol. 86, no 4
Keyword [en]
solar-cells, total-energy, thin-films, efficiency, cuinse2, culnse2
Identifiers
URN: urn:nbn:se:kth:diva-14500DOI: 10.1063/1.1854218ISI: 000226761400040Scopus ID: 2-s2.0-13644281073OAI: oai:DiVA.org:kth-14500DiVA: diva2:332541
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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Persson, Clas

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