Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Fluence, flux, and implantation temperature dependence of ion-implantation-induced defect production in 4H-SiC
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-8760-1137
Show others and affiliations
2005 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 97, no 3Article in journal (Refereed) Published
Abstract [en]

Vacancy-type defect production in Al- and Si-implanted 4H-SiC has been studied as a function of ion fluence, ion flux, and implantation temperature in the projected ion range region by positron annihilation spectroscopy and Rutherford backscattering techniques. Ion channeling measurements show that the concentration of displaced silicon atoms increases rapidly with increasing ion fluence. In the ion fluence interval of 10(13)-10(14) cm(-2) the positron annihilation parameters are roughly constant at a defect level tentatively associated with the divacancy VCVSi. Above the ion fluence of 10(14) cm(-2) larger vacancy clusters are formed. For implantations as a function of ion flux (cm(-2) s(-1)), ion channeling and positron annihilation measurements behave similarly, i.e., indicating increasing damage in the projected range region with increasing ion flux. However, for samples implanted at different temperatures the positron annihilation parameter S shows a clear minimum at approximately 100 degreesC, whereas the normalized backscattering yield decrease continuously with increasing implantation temperature. This is explained by the formation of larger vacancy clusters when the implantation temperature is increased.

Place, publisher, year, edition, pages
2005. Vol. 97, no 3
Keyword [en]
monoenergetic positron beams, vacancy-type defects, damage evolution, silicon-carbide, self-diffusion, aluminum ions, al, annihilation, si, distributions
Identifiers
URN: urn:nbn:se:kth:diva-14504DOI: 10.1063/1.1844618ISI: 000226778300019Scopus ID: 2-s2.0-13744258288OAI: oai:DiVA.org:kth-14504DiVA: diva2:332545
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Authority records BETA

Hallén, Anders.

Search in DiVA

By author/editor
Hallén, Anders.
By organisation
Microelectronics and Information Technology, IMIT
In the same journal
Journal of Applied Physics

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 24 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf