Fabrication of high-density ordered nanoarrays in silicon dioxide by MeV ion track lithography
2005 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 97, no 4Article in journal (Refereed) Published
Self-assembled nanoporous alumina films were employed as masks for MeV ion track lithography. Films with thickness of 2 mum and pore diameters of 30 and 70 nm were attached to thermally grown SiO2 covered with a thin gold layer. The samples were aligned with respect to the beam by detecting backscattered He+ ions with the initial energy of 2 MeV. The ordered pattern of the porous alumina films was successfully transferred into SiO2 after irradiation with a 4 MeV Cl2+ beam at fluence of 10(14) ions/cm(2), followed by chemical etching in a 5% HF solution.
Place, publisher, year, edition, pages
2005. Vol. 97, no 4
alumina, implantation, arrays
IdentifiersURN: urn:nbn:se:kth:diva-14511DOI: 10.1063/1.1850617ISI: 000226841900077ScopusID: 2-s2.0-13844271258OAI: oai:DiVA.org:kth-14511DiVA: diva2:332552
QC 201005252010-08-052010-08-05Bibliographically approved