Improvement in epitaxial quality of selectively grown Si1-xGex layers with low pattern sensitivity for CMOS applications
2005 (English)In: Materials Science in Semiconductor Processing, ISSN 1369-8001, Vol. 8, no 03-jan, 25-30 p.Article in journal (Refereed) Published
The selective growth of Si1-xGex structures (0.09<x<0.29) on patterned substrates aimed for channel layer application in metal oxide semiconductor field effect transistor (MOSFET) structures by using chemical vapor deposition (CVD) has been investigated. By optimizing the growth parameters, the surface roughness of these structures was improved and layers with better epitaxial quality was obtained. Furthermore, two methods are proposed to decrease the pattern-dependency of the epitaxy process. The key point in these methods is based on the reduction of surface diffusion of the adsorbed species on the oxide. This can be obtained by introducing square polycrystalline Si stripes around the oxide openings acting as diffusion barriers. Subsequently, chemical. mechanical polishing was performed to remove the polycrystalline stripe on the oxide. Evaluation of the proposed solution's for issues such as defect generation and the possibility for integration in device structures have also been performed.
Place, publisher, year, edition, pages
2005. Vol. 8, no 03-jan, 25-30 p.
epitaxy, SiGe, loading effect, CVD, heterojunction bipolar-transistors, chemical-vapor-deposition, si, mobility
IdentifiersURN: urn:nbn:se:kth:diva-14537ISI: 000227056200006ScopusID: 2-s2.0-13244276347OAI: oai:DiVA.org:kth-14537DiVA: diva2:332578
QC 20100525 QC 20111012. 2nd International SiGe Technology and Device Meeting (ISTDM). Frankfurt, GERMANY. MAY 16-19, 20042010-08-052010-08-052011-10-12Bibliographically approved