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Incorporation of boron in SiGe(C) epitaxial layers grown by reduced pressure chemical vapor deposition
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
2005 (English)In: Materials Science in Semiconductor Processing, ISSN 1369-8001, E-ISSN 1873-4081, Vol. 8, no 03-jan, 97-101 p.Article in journal (Refereed) Published
Abstract [en]

In this paper the strain and electrical properties of epitaxial in situ B-doped (10(18)-10(21) cm(-3)) SiGeC layers (23, 28% Ge and 0, 0.5% C) has been investigated. The growth rate was shown to have a significant increase at 3 x 10(-2) mTorr diborane partial pressure. This point coincides with an enhancement in boron incorporation, which was explained by the strain compensation effect of boron in the highly strained SiGeC layers. In these samples, the total Ge and C content was shown to remain constant with increasing diborane partial pressure. The substitutional/active dopant concentration in SiGe layers was obtained by high-resolution X-ray diffraction by measuring the strain compensation effect of boron. The interaction between C and B in SiGe matrix was also investigated. This was compared with the active dopant concentration obtained from Hall measurements in order to achieve a Hall scattering factor of 0.3-0.7 for dopant concentrations between 3 x 10(18) and 5 x 10(21) cm(-3). The resistivity values of these layers were in the range 2 x 10(-2) -4 x 10(-4) Omega cm. Finally, it was shown that boron atoms in SiGeC layers locate preferably at substitutional sites in contrary to carbon atoms at both substitutional and interstitial sites.

Place, publisher, year, edition, pages
2005. Vol. 8, no 03-jan, 97-101 p.
Keyword [en]
chemical vapor deposition, epitaxy, SiGeC alloys, boron doping, x-ray-diffraction, si, relaxation, si1-xgex, silicon, carbon
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-14538DOI: 10.1016/j.mssp.2004.09.074ISI: 000227056200019Scopus ID: 2-s2.0-13244255691OAI: oai:DiVA.org:kth-14538DiVA: diva2:332579
Note
QC 20100525 QC 20111012. 2nd International SiGe Technology and Device Meeting (ISTDM). Frankfurt, GERMANY. MAY 16-19, 2004Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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