NiSi integration in a non-selective base SiGeCHBT process
2005 (English)In: Materials Science in Semiconductor Processing, ISSN 1369-8001, Vol. 8, no 03-jan, 245-248 p.Article in journal (Refereed) Published
A self-aligned nickel silicide (salicide) process is integrated into a non-selective base SiGeC HBT process. The device features a unique, fully silicided base region that grows laterally under the emitter pedestal. This Ni(SiGe) formed in this base region was found to have a resistivity of 23-24 muOmega cm. A difference in the silicide thickness between the boron-doped SiGeC extrinsic base region and the in situ phosphorous-doped emitter region is observed and further analyzed and confirmed with a blanket wafer silicide study. The silicided device exhibited a current gain of 64 and HF device performance of 39 and 32 GHz for f(t) and f(MAX), respectively.
Place, publisher, year, edition, pages
2005. Vol. 8, no 03-jan, 245-248 p.
SiGeCHBT, nickel silicide, silicides, si1-xgex
IdentifiersURN: urn:nbn:se:kth:diva-14539DOI: 10.1016/j.mssp.2004.09.024ISI: 000227056200045ScopusID: 2-s2.0-13244257199OAI: oai:DiVA.org:kth-14539DiVA: diva2:332580
QC 20100525 QC 20111012. 2nd International SiGe Technology and Device Meeting (ISTDM). Frankfurt, GERMANY. MAY 16-19, 20042010-08-052010-08-052011-10-12Bibliographically approved