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NiSi integration in a non-selective base SiGeCHBT process
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-6459-749X
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
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2005 (English)In: Materials Science in Semiconductor Processing, ISSN 1369-8001, E-ISSN 1873-4081, Vol. 8, no 03-jan, 245-248 p.Article in journal (Refereed) Published
Abstract [en]

A self-aligned nickel silicide (salicide) process is integrated into a non-selective base SiGeC HBT process. The device features a unique, fully silicided base region that grows laterally under the emitter pedestal. This Ni(SiGe) formed in this base region was found to have a resistivity of 23-24 muOmega cm. A difference in the silicide thickness between the boron-doped SiGeC extrinsic base region and the in situ phosphorous-doped emitter region is observed and further analyzed and confirmed with a blanket wafer silicide study. The silicided device exhibited a current gain of 64 and HF device performance of 39 and 32 GHz for f(t) and f(MAX), respectively.

Place, publisher, year, edition, pages
2005. Vol. 8, no 03-jan, 245-248 p.
Keyword [en]
SiGeCHBT, nickel silicide, silicides, si1-xgex
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-14539DOI: 10.1016/j.mssp.2004.09.024ISI: 000227056200045Scopus ID: 2-s2.0-13244257199OAI: oai:DiVA.org:kth-14539DiVA: diva2:332580
Note
QC 20100525 QC 20111012. 2nd International SiGe Technology and Device Meeting (ISTDM). Frankfurt, GERMANY. MAY 16-19, 2004Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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Malm, B. Gunnar

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