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Determination of spatial resolution in atomic-force-microscopy-based electrical characterization techniques using quantum well structures
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
2005 (English)In: Journal of Vacuum Science & Technology B, ISSN 1071-1023, E-ISSN 1520-8567, Vol. 23, no 1, 61-65 p.Article in journal (Refereed) Published
Abstract [en]

In this work, a procedure to determine the spatial resolution in scan ning capacitance (SCM) and scanning spreading resistance microscopy (SSRM) is proposed and demonstrated. It is based on profiling of confined carriers (in cross section) in quantum well (QW) structures consisting of QWs with different well widths and interwell spacing. Spatial resolution of sub-5 nm was observed for SSRM with commercially available diamond-coated silicon probes and sub-30 nm for SCM with IrPt5-coated probes. The influence of experimental parameters such as tip-sample bias and tip averaging on lateral resolution is discussed and appropriate measurement conditions for performing high-resolution measurements are highlighted. Finally, it is proposed that such structures can be used not only to select probes appropriate for high resolution measurements, but also in the development of new probes.

Place, publisher, year, edition, pages
2005. Vol. 23, no 1, 61-65 p.
Keyword [en]
spreading resistance microscopy, scanning capacitance microscopy, devices, probes, tips
URN: urn:nbn:se:kth:diva-14563DOI: 10.1116/1.1835317ISI: 000227300900011ScopusID: 2-s2.0-31144473588OAI: diva2:332604
QC 20100525Available from: 2010-08-05 Created: 2010-08-05Bibliographically approved

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Anand, Srinivasan
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Microelectronics and Information Technology, IMIT
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