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Optically detected microwave resonance and carrier dynamics in InAs/GaAs quantum dots
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-4606-4865
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2005 (English)In: Acta Physica Polonica. A, ISSN 0587-4246, Vol. 107, no 2, 435-439 p.Article in journal (Refereed) Published
Abstract [en]

The properties of small-sized high density InAs/GaAs quantum dots (emitting at 1.25 eV) are studied by means of optically detected microwave resonance spectroscopy and time resolved photoluminescence techniques. The results are discussed in terms of trapping and thermal escape of the carriers as well as their relaxation and recombination in quantum dots. The data are compared with those recently obtained on shallowly formed InAs quantum dot structures.

Place, publisher, year, edition, pages
2005. Vol. 107, no 2, 435-439 p.
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Physical Sciences
URN: urn:nbn:se:kth:diva-14566ISI: 000227308300043ScopusID: 2-s2.0-14644411073OAI: diva2:332607
QC 20100525 QC 20111011. 12th International Symposium on Ultrafast Phenomena in Semiconductors (12-UFPS). Vilnius, LITHUANIA. AUG 22-25, 2004Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2011-12-01Bibliographically approved

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Marcinkevicius, Saulius
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