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Characterization of heteroepitaxial Na0.5K0.5NbO3/La0.5Sr0.5CoO3 electro-optical cell
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-8774-9302
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
2005 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 86, no 6, 062901-1-062901-3 p.Article in journal (Refereed) Published
Abstract [en]

Heteroepitaxial Na0.5K0.5NbO3(1.5 mum)/La0.5Sr0.5CoO3(0.5 mum) (NKN/LSCO) films were grown on an Al2O3(0112) single crystal (r-cut sapphire) by rf-magnetron sputtering (NKN) and pulsed laser deposition (LSCO) techniques. Prism coupling waveguide refractometry has been employed to characterize vertical capacitive electro-optical cells with 2 X 8 mm(2) semitransparent Au top electrodes. Fitting reflectivity spectra to Fresnel formulas yields extraordinary and ordinary refractive indices n(e) = 2.232 and n(o) = 2.234 as well as electro-optic coefficient r(13) = 17.4 pm/V. Dispersion of the refraction index follows the Sellmeier formula n(2) = 1 + 3.46/[1-(244 nm/lambda)(2)] in the range from 400 nm to 850 nm.

Place, publisher, year, edition, pages
2005. Vol. 86, no 6, 062901-1-062901-3 p.
Keyword [en]
na0.5k0.5nbo3 thin-films, chemical-vapor-deposition, pulsed-laser deposition, knbo3 single-crystal, growth, sapphire
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-14571DOI: 10.1063/1.1861121ISI: 000227355200054Scopus ID: 2-s2.0-18644386312OAI: oai:DiVA.org:kth-14571DiVA: diva2:332612
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved
In thesis
1. Electronic materials: growth and characterisation
Open this publication in new window or tab >>Electronic materials: growth and characterisation
2005 (English)Doctoral thesis, comprehensive summary (Other scientific)
Abstract [en]

In this thesis the InSb(111), InAs(111) and GaSb(001) surfaces have been studied by means of time- and angle-resolved photoemission spectroscopy based upon the femtosecond laser system. The pump-and-probe technique allows to analyse both electron states in the valence band and normally unpopulated electron states above the valence band, which can be occupied by transiently excited carriers at the optically pumped surface. The life time of excited carriers is analysed by controlling over the time delay between pump and probe pulses. Experimental studies of the InSb(111) surface and comparison with a previously studied InSb(110) surface show electron excitations in the bulk region with a minor surface contribution. Time-resolved experiments of carrier dynamics at the polar InAs(111)A and InAs(111)B surfaces show about the same life time of excited carriers, while no populated states above the valence band maximum have been found at the InAs(111)A due to the charge removal. Surface intergap electron states have been found at the GaSb(001) surface located at ~250 meV above the valence band maximum. Angle-resolved experiments showed a strong confinement of this state at the centre of the surface Brillouin zone.

A new two dimensional angle-resolved multi-anode analyser for the femtosecond laser photoemission setup has been constructed. The analyser can resolve a cone opening angle of ~1º at a drift distance of ~0.5 m with an energy resolution of ~125 meV.

A continuous series of binary system SrTiO3–PbZr0.52Ti0.48O3 has been grown by pulsed laser deposition (PLD) on sapphire substrate with crystalline quality control by x-ray diffraction (XRD). The maximum tunability has been tailored to room temperature, where STO�PZT (71/29) composition shows superior performance. A PbZr0.52Ti0.48O3 thin film pressure sensor has been fabricated by PLD and characterised by XRD and electrical measurements. The piezoelectric constant was found to be ~20 % higher compared to the bulk ceramics. A ferroelectric thin film electro-optical cell Na0.5K0.5NbO3/La0.5Sr0.5CoO3 (NKN/LSCO) on sapphire has been fabricated by PLD. Refractive indices and electro-optical coefficient of the cell were characterised by prism coupling refractometry. The tunability of the PLD fabricated 2 μm slot NKN thin film interdigital capacitor has been found ~23 % at 40 V bias voltage and frequency 1 MHz.

Place, publisher, year, edition, pages
Stockholm: KTH, 2005. vii, 80 p.
Series
Trita-FYS, ISSN 0280-316X ; 3077
Keyword
Electrophysics, Photoemission, Ultra-short laser pulse, Thin film, Laser deposition, InSb, InAs, GaSb, Ferroelectrics, Elektrofysik
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-144 (URN)91-7283-967-8 (ISBN)
Public defence
2005-03-18, Kollegiesalen, Valhallavägen 79, Stockholm, 10:15
Opponent
Supervisors
Note
QC 20101015Available from: 2005-03-07 Created: 2005-03-07 Last updated: 2010-10-15Bibliographically approved

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