Base resistance scaling for SiGeC HBTs with a fully nickel-silicided extrinsic base
2005 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 26, no 4, 246-248 p.Article in journal (Refereed) Published
A novel SiGeC HBT process with a quasi-self-aligned emitter-base architecture and a fully nickel-silicided extrinsic base region has been developed. A very low total base resistance R-B was achieved along with simultaneous NiSi formation on the polycrystalline emitter and collector regions. Uniform silicide formation was obtained across the wafer, and the resistivity. of the Ni(SiGe:C) silicide layer was 24 mu Omega (.) cm. About 50-100 nm of lateral growth of silicide,. underneath the emitter pedestal was observed. DC and HF results with balanced f(T)/f(MAX) values of 41/42 GHz were demonstrated for 0.5 X 10 mu m(2) transistors.
Place, publisher, year, edition, pages
IEEE Press, 2005. Vol. 26, no 4, 246-248 p.
base resistance, carbon, heterojunction bipolar transistors (HBTs), nickel, SiGe, SiGeC, silicide, silicon-germanium
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-14629DOI: 10.1109/LED.2005.844697ISI: 000227870600008ScopusID: 2-s2.0-17644374782OAI: oai:DiVA.org:kth-14629DiVA: diva2:332670
QC 201005252010-08-052010-08-052014-02-19Bibliographically approved