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Enhanced boron diffusion in excimer laser preannealed Si
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.ORCID iD: 0000-0002-0292-224X
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2005 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 86, no 15Article in journal (Refereed) Published
Abstract [en]

We have investigated boron diffusion during rapid thermal annealing in Si implanted with boron using an energy of 1 keV and a dose of 1 x 10(16) cm(-2). Two types of samples have been studied: As-implanted and pretreated with excimer laser annealing. For both types an enhanced diffusion of boron has been observed with an enhancement by a factor of 3-5 over the standard diffusion. It is suggested that the high concentration of implanted boron is a dominant factor for the diffusion enhancement as compared to the effect of implantation-induced damage. The data indicate that the proximity of the surface can also affect the boron diffusion enhancement.

Place, publisher, year, edition, pages
2005. Vol. 86, no 15
Keyword [en]
energy implanted boron, dopant diffusion, silicon, redistribution, temperature, injection
Identifiers
URN: urn:nbn:se:kth:diva-14727DOI: 10.1063/1.1899765ISI: 000228901600028Scopus ID: 2-s2.0-20844458231OAI: oai:DiVA.org:kth-14727DiVA: diva2:332768
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05Bibliographically approved

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Linnarsson, Margareta K.

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