Enhanced boron diffusion in excimer laser preannealed Si
2005 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 86, no 15Article in journal (Refereed) Published
We have investigated boron diffusion during rapid thermal annealing in Si implanted with boron using an energy of 1 keV and a dose of 1 x 10(16) cm(-2). Two types of samples have been studied: As-implanted and pretreated with excimer laser annealing. For both types an enhanced diffusion of boron has been observed with an enhancement by a factor of 3-5 over the standard diffusion. It is suggested that the high concentration of implanted boron is a dominant factor for the diffusion enhancement as compared to the effect of implantation-induced damage. The data indicate that the proximity of the surface can also affect the boron diffusion enhancement.
Place, publisher, year, edition, pages
2005. Vol. 86, no 15
energy implanted boron, dopant diffusion, silicon, redistribution, temperature, injection
IdentifiersURN: urn:nbn:se:kth:diva-14727DOI: 10.1063/1.1899765ISI: 000228901600028ScopusID: 2-s2.0-20844458231OAI: oai:DiVA.org:kth-14727DiVA: diva2:332768
QC 201005252010-08-052010-08-05Bibliographically approved