Structural and optical properties of GaN/AlN multiple quantum wells for intersubband applications
2005 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 278, no 1-4, 397-401 p.Article in journal (Refereed) Published
GaN/AIN multiple quantum well structures of 1, 5 and 20 periods were grown by molecular beam epitaxy (MBE). To investigate structural parameters, symmetrical scan (0002) and reciprocal space mapping in the vicinity of the GaN (10 15) plane were made by X-ray diffraction (XRD). The layer thickness, composition and relaxation were determined and gave good agreement with simulated results. The 20 period multiple quantum well (MQW) sample exhibited an intersubband resonance at 360 meV, which corresponds well to the structure data determined by XRD.
Place, publisher, year, edition, pages
2005. Vol. 278, no 1-4, 397-401 p.
FT-IR spectroscopy, intersubband transitions, X-ray diffraction, molecular beam epitaxy, multiple quantum wells, semiconducting III-V materials, devices, films
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-14731DOI: 10.1016/j.jcrysgro.2004.12.080ISI: 000228916300074ScopusID: 2-s2.0-18444398374OAI: oai:DiVA.org:kth-14731DiVA: diva2:332772
QC 20100525 QC 201110112010-08-052010-08-052011-10-11Bibliographically approved