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Structural and optical properties of GaN/AlN multiple quantum wells for intersubband applications
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
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2005 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 278, no 1-4, 397-401 p.Article in journal (Refereed) Published
Abstract [en]

GaN/AIN multiple quantum well structures of 1, 5 and 20 periods were grown by molecular beam epitaxy (MBE). To investigate structural parameters, symmetrical scan (0002) and reciprocal space mapping in the vicinity of the GaN (10 15) plane were made by X-ray diffraction (XRD). The layer thickness, composition and relaxation were determined and gave good agreement with simulated results. The 20 period multiple quantum well (MQW) sample exhibited an intersubband resonance at 360 meV, which corresponds well to the structure data determined by XRD.

Place, publisher, year, edition, pages
2005. Vol. 278, no 1-4, 397-401 p.
Keyword [en]
FT-IR spectroscopy, intersubband transitions, X-ray diffraction, molecular beam epitaxy, multiple quantum wells, semiconducting III-V materials, devices, films
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-14731DOI: 10.1016/j.jcrysgro.2004.12.080ISI: 000228916300074Scopus ID: 2-s2.0-18444398374OAI: oai:DiVA.org:kth-14731DiVA: diva2:332772
Note
QC 20100525 QC 20111011Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2011-10-11Bibliographically approved

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Holmström, PetterJänes, PeterEkenberg, UlfThylén, Lars
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