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Time-resolved photoluminescence and Raman scattering of InAsSb/InP quantum dots
KTH, School of Information and Communication Technology (ICT), Optics and Photonics.ORCID iD: 0000-0002-4606-4865
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2005 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 86, no 18Article in journal (Refereed) Published
Abstract [en]

InAsSb quantum dots (QDs) grown by metalorganic vapor phase epitaxy on In0.53Ga0.47As/InP under different TMSb/AsH3 flow ratios have been characterized by means of continuous wave and time-resolved photoluminescence (PL) as well as Raman scattering. It was found that the flow ratio has a very strong influence on the QD composition, PL peak energies, and carrier recombination times. While the samples prepared using low TMSb/AsH3 flow ratios show a bimodal character with both InAs and InAsSb QDs present, in the structures grown at high flow ratios the InAsSb QDs dominate, showing strong photoluminescence intensity, fast carrier capture and slow recombination.

Place, publisher, year, edition, pages
2005. Vol. 86, no 18
Keyword [en]
optical phonons, phase epitaxy, strain, gaas, spectroscopy, layer
URN: urn:nbn:se:kth:diva-14769DOI: 10.1063/1.1900308ISI: 000229288700010ScopusID: 2-s2.0-20844447332OAI: diva2:332810
QC 20100525Available from: 2010-08-05 Created: 2010-08-05Bibliographically approved

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