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Lateral encroachment of Ni-silicides in the source/drain regions on ultrathin silicon-on-insulator
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-6705-1660
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-6459-749X
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2005 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 86, no 25Article in journal (Refereed) Published
Abstract [en]

Lateral growth of Ni silicide towards the channel region of metal-oxide-semiconductor transistors (MOSFETs) fabricated on ultrathin silicon-on-insulator (SOI) is characterized using SOI wafers with a 20-nm-thick surface Si layer. With a 10-nm-thick Ni film for silicide formation, p-channel MOSFETs displaying ordinary device characteristics with silicided p(+) source/drain regions were demonstrated. No lateral growth of NiSix under gate isolation spacers was found according to electron microscopy. When the Ni film was 20 nm thick, Schottky contact source/drain MOSFETs showing typical ambipolar characteristics were obtained. A severe lateral encroachment of NiSix into the channel region leading to an increased gate leakage was revealed, while no detectable voiding at the silicide front towards the Si channel was observed.

Place, publisher, year, edition, pages
2005. Vol. 86, no 25
Keyword [en]
film formation, thin-films, ni2si, diffusion, mosfets, couples
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-14837DOI: 10.1063/1.1944888ISI: 000229858300065Scopus ID: 2-s2.0-24344491949OAI: oai:DiVA.org:kth-14837DiVA: diva2:332878
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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Hellström, Per-ErikMalm, B. Gunnar

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