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Free-standing epitaxial La1-x(Sr,Ca)(x)MnO3 membrane on Si for uncooled infrared microbolometer.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Material Physics.
2005 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 87, no 3Article in journal (Refereed) Published
Abstract [en]

Ar ion beam etching and inductively coupled SF6 and C4F8 plasma-etching processes have been employed to fabricate free standing membrane from the heteroepitaxial La1-x(Sr,Ca)(x)MnO3(50 nm)/Bi4Ti3O12(100 nm)/CeO2(40 nm)/YSZ(30 nm) film structure pulsed laser deposited on Si(001) wafer. We demonstrate feasibility to use epitaxial colossal magnetoresistive manganite film as thermally isolated self-supporting membrane for uncooled infrared microbolometer applications.

Place, publisher, year, edition, pages
2005. Vol. 87, no 3
Keyword [en]
pulsed-laser deposition, thin-films, colossal magnetoresistance, silicon, growth
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
URN: urn:nbn:se:kth:diva-14920DOI: 10.1063/1.1996845ISI: 000230596000063ScopusID: 2-s2.0-24144441232OAI: diva2:332961
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2010-11-01Bibliographically approved
In thesis
1. Micromachined epitaxial colossal mognetoresistors for uncooled infrared bolometer
Open this publication in new window or tab >>Micromachined epitaxial colossal mognetoresistors for uncooled infrared bolometer
2005 (English)Doctoral thesis, comprehensive summary (Other scientific)
Abstract [en]

High quality perovskite manganites, La1-xAxMnO3 (A = Ca, Sr, Ba) are very attractive materials due to their great application potential for magnetic memory, uncooled infrared (IR) microbolometer and spintronics devices. This thesis presents studies of the growth and material characterization (including structural, electrical, magnetic and noise) of epitaxial manganite films on Si and GaAs. Furthermore, investigations about strain effect on structural and electrical properties of manganites, and finally fabrication of self-supported free standing microstructures for uncooled IR bolometer are also demonstrated.

To obtain high quality epitaxial manganite films on semiconductor substrates at room temperature, using a combination of La0.67Sr0.33MnO3 (LSMO) and La0.67Ca0.33MnO3 (LCMO) compounds, La0.67(Sr,Ca)0.33MnO3 (LSCMO) films were successfully grown on Si substrates with Bi4Ti3O12(BTO)/CeO2/YSZ buffers by pulsed laser deposition (PLD) technique. Crystallographic relations between layers shows cube-on-cube for BTO/CeO2/YSZ/Si and diagonal-on-side for LSCMO films on BTO layer. 4.4 %K-1 maximum temperature coefficient of resistivity (TCR = 1/ρ·dρ/dT) and 2.9 %kOe-1 colossal magnetoresistance (CMR) were obtained at room temperature. Assuming of a prototype of temperature sensor, 1.2 μK/√Hz of noise equivalent temperature difference (NETD) and 2.9×108 cm√Hz/W of detectivity are expected to achieve at 294 K, 30 Hz. For GaAs substrates, using MgO buffer layer, LCMO films shows 9.0 %K-1 of TCR at 223 K while LSMO exhibits 2 %K-1 at 327 K.

Systematic strain effects on structural and electrical properties of La0.75Sr0.25MnO3 LSMO) films on BTO/CeO2/YSZ-buffered Si, Si1-xGex/Si (compressive strain, x = 0.05-0.20) and Si1-yCy/Si (tensile, y = 0.01) were investigated. The strain induced from Si1-xGex/Si and Si0.99C0.01/Si has a tendency to decrease the roughness of CMR films compared to Si sample. High resistivity and low TCR values are observed for Si0.8Ge0.2/Si and Si0.99C0.01/Si samples due to excessive strains whereas Si0.9Ge0.1/Si and Si0.95Ge0.05/Si show slight improvements of films quality and TCR value.

To fabricate LSCMO manganite bolometer on Si, wet etching with KOH and BHF and dry etching methods with Ar ion beam etching (IBE) were studied. For KOH wet etching, LSCMO films show high chemical resistance with lower than 0.2 nm/min of etch rate. BHF wet etching shows high etching selectivity over photoresist mask and silicon substrates. The etch rates for LSCMO and BTO layers are 22 and 17 nm/min. For Ar IBE, LSCMO films and oxide buffer layers show similar etch rates, 16-17 nm/min that are lower compared to 24 nm/min for Si.

Free standing, self-supported heteroepitaxial LSCMO/BTO/CeO2/YSZ membranes for bolometer pixels on Si was successfully fabricated by Ar IBE and ICP etching techniques using a preannealed photoresist. The structural investigation by TEM revealed the sharp interfaces between layers. The electrical property of the free standing membrane was slightly degraded due to strain release and multi-step etching effect. These results demonstrate feasibility to use heteroepitaxial oxide structures as a thermally isolated membrane with conventional photoresist patterning.

Place, publisher, year, edition, pages
Stockholm: KTH, 2005. xvi, 78 p.
Trita-EKT, ISSN 1650-8599 ; 2005:5
La0.67(Sr, Ca)0.33MnO3 (LSCMO), La0.67Sr0.33MnO3 (LSMO)
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
urn:nbn:se:kth:diva-535 (URN)
Public defence
2005-12-09, Sal C1, KTH-Electrum, 10:00
QC 20101101Available from: 2005-01-02 Created: 2005-01-02 Last updated: 2010-11-01Bibliographically approved

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