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Boron distribution in silicon after multiple pulse excimer laser annealing
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.ORCID iD: 0000-0002-0292-224X
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2005 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 87, no 8Article in journal (Refereed) Published
Abstract [en]

We have studied B redistribution in Si after excimer laser annealing (ELA) with multiple laser pulses. B was implanted with energies of 1 and 10 keV and doses of 1x10(14) and 1x10(15) cm(-2). ELA with the number of pulses from 1 to 100 was performed at room temperature and 450 degrees C in vacuum. Irrespective of the implantation parameters and the ELA conditions used, a pile-up in the B concentration is observed near the maximum melting depth after ten pulses of ELA. Moreover, a detailed study has revealed that B accumulates at the maximum melt depth gradually with the number of ELA pulses. Besides, an increase in the carrier concentration is observed at the maximum melt depth, suggesting electrical activity of the accumulated B. Formation of Si-B complexes and vacancy accumulation during multiple ELA are discussed as possible mechanisms for the B build-up.

Place, publisher, year, edition, pages
2005. Vol. 87, no 8
Keyword [en]
energy implanted boron, electrical activation, redistribution, diffusion, dopants
URN: urn:nbn:se:kth:diva-14982DOI: 10.1063/1.2032603ISI: 000231310700017ScopusID: 2-s2.0-24344455139OAI: diva2:333023
QC 20100525Available from: 2010-08-05 Created: 2010-08-05Bibliographically approved

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Linnarsson, Margareta K.
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