Change search
ReferencesLink to record
Permanent link

Direct link
Annealing behavior between room temperature and 2000 degrees C of deep level defects in electron-irradiated n-type 4H silicon carbide
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.ORCID iD: 0000-0002-0292-224X
2005 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 98, no 4Article in journal (Refereed) Published
Abstract [en]

The annealing behavior of irradiation-induced defects in 4H-SiC epitaxial layers grown by chemical-vapor deposition has been systematically studied by means of deep level transient spectroscopy (DLTS). The nitrogen-doped epitaxial layers have been irradiated with 15-MeV electrons at room temperature and an isochronal annealing series from 100 to 2000 degrees C has been performed. The DLTS measurements, which have been carried out in the temperature range from 120 to 630 K after each annealing step, revealed the presence of six electron traps located in the energy range of 0.45-1.6 eV below the conduction-band edge (E-c). The most prominent and stable ones occur at E-c-0.70 eV (labeled Z(1/2)) and E-c-1.60 eV(EH6/7). After exhibiting a multistage annealing process over a wide temperature range, presumably caused by reactions with migrating defects, a significant fraction of both Z(1/2) and EH6/7 (25%) still persists at 2000 degrees C and activation energies for dissociation in excess of 8 and similar to 7.5 eV are estimated for Z(1/2) and EH6/7, respectively. On the basis of these results, the identity of Z(1/2) and EH6/7 is discussed and related to previous assignments in the literature.

Place, publisher, year, edition, pages
2005. Vol. 98, no 4
Keyword [en]
sic single-crystals, self-diffusion, nitrogen participation, epitaxial layers, centers, semiconductors, states
URN: urn:nbn:se:kth:diva-15002DOI: 10.1063/1.2009816ISI: 000231551700044ScopusID: 2-s2.0-25144431509OAI: diva2:333043
QC 20100525Available from: 2010-08-05 Created: 2010-08-05Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Linnarsson, Margareta K.
By organisation
Microelectronics and Applied Physics, MAP
In the same journal
Journal of Applied Physics

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 31 hits
ReferencesLink to record
Permanent link

Direct link