Geometrical effects in high current gain 1100-V 4H-SiC BJTs
2005 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 26, no 10, 743-745 p.Article in journal (Refereed) Published
This paper reports the fabrication of epitaxial 4H-SiC bipolar junction transistors (BJTs) with a maximum current gain beta = 64 and a breakdown voltage of 1100 V. The high beta value is attributed to high material quality obtained after a continuous epitaxial growth of the base-emitter junction. The BJTs show a clear emitter-size effect indicating that surface recombination has a significant influence on beta. A minimum distance of 2-3 mu m between the emitter edge and base contact implant was found adequate to avoid a substantial beta reduction.
Place, publisher, year, edition, pages
2005. Vol. 26, no 10, 743-745 p.
4H-SiC, bipolar junction transistor (BJT), breakdown voltage, current gain, emitter-size effect, bipolar junction transistors, 1800 v
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-15068DOI: 10.1109/led.2005.856010ISI: 000232208700015ScopusID: 2-s2.0-27144457411OAI: oai:DiVA.org:kth-15068DiVA: diva2:333109
QC 201005252010-08-052010-08-052010-12-08Bibliographically approved