Integration of colossal magnetoresistors with GaAs
2005 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 284, no 02-jan, 1-5 p.Article in journal (Refereed) Published
Colossal magnetoresistive (CMR) La0.67Ca0.33MnO3 (LCMO) and La0.67Sr0.33MnO3 (LSMO) films have been grown by pulsed laser deposition technique on GaAs(001) substrates buffered with epitaxial MgO layer. X-ray diffraction revealed strong c-axis out-of-plane orientation and strong in-plane texture of CMR/MgO bilayers on GaAs single crystal. The maximum temperature coefficient of resistivity TCR = 9.0% K-1 at 223 K and 2.0% K-1 at 327 K. and the magnetoresistance Delta rho/rho similar to-7.95% kOe(-1) and -1.47% kOe(-1) have been achieved for LCMO/MgO/GaAs and LSMO/MgO/GaAs heteroepitaxial structures, respectively. Comparison with the test LCMO and LSMO films grown directly onto the bulk MgO(001) single cry tal demonstrates the identity of LSMO/MgO/GaAs and LSMO/MgO films properties whereas the LCMO films grown on MgO buffered GaAs show lower transition temperature T-c = 242 K compared to 253 K in LCMO/MgO.
Place, publisher, year, edition, pages
2005. Vol. 284, no 02-jan, 1-5 p.
PVD, manganites, colossal magnetoresistivity, uncooled infrared bolometers, mgo buffer layers, thin-films, epitaxial-growth
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-15086DOI: 10.1016/j.jcrysgro.2005.06.054ISI: 000232387900001ScopusID: 2-s2.0-25144452481OAI: oai:DiVA.org:kth-15086DiVA: diva2:333127
QC 201005252010-08-052010-08-052010-11-01Bibliographically approved