Mode locking a 1550 nm semiconductor disk laser by using a GaInNAs saturable absorber
2005 (English)In: Optics Letters, ISSN 0146-9592, E-ISSN 1539-4794, Vol. 30, no 20, 2793-2795 p.Article in journal (Refereed) Published
Passive mode locking of an optically pumped, InP-based, 1550 nm semiconductor disk laser by using a GaInNAs saturable absorber mirror is demonstrated. To reduce material heating and enable high-power operation, a 50 mu m thick diamond heat spreader is bonded to the surface of the gain chip. The laser operates at a repetition frequency of 2.97 GHz and emits near-transform-limited 3.2 ps pulses with an average output power of 120 mW.
Place, publisher, year, edition, pages
2005. Vol. 30, no 20, 2793-2795 p.
surface-emitting laser, high-power, mu-m, cw
IdentifiersURN: urn:nbn:se:kth:diva-15105ISI: 000232518100037ScopusID: 2-s2.0-27744567114OAI: oai:DiVA.org:kth-15105DiVA: diva2:333146
QC 201005252010-08-052010-08-05Bibliographically approved