Comparison of performance of n- and p-type spin transistors with conventional transistors
2005 (English)In: Journal of Superconductivity, ISSN 0896-1107, E-ISSN 1572-9605, Vol. 18, no 3, 349-356 p.Article in journal (Refereed) Published
A spintronic device that has stimulated much research interest is the Datta-Das spin transistor. The mechanism behind it called the Rashba effect is that an applied voltage gives rise to a spin splitting. We propose ways to optimize this effect. The relevant spin splitting in k-space is predicted to increase with electric field at a rate that is more than two orders of magnitude larger for holes than for electrons. Furthermore, the almost negligible lattice-mismatch between GaAs and AlGaAs can be used to further enhance the advantage of hole-based spin transistors. Compared to present transistors we conclude that electron-based spin transistors will have problems to become competitive but hole-based ones are much more promising.
Place, publisher, year, edition, pages
2005. Vol. 18, no 3, 349-356 p.
spintronics, transistor, quantum well, spin splitting, hole subband, asymmetric quantum-wells, semiconductors, electron, heterostructure, microstructures, approximation, orientation, spintronics, injection, layers
IdentifiersURN: urn:nbn:se:kth:diva-15187DOI: 10.1007/s10948-005-0009-yISI: 000233398900009ScopusID: 2-s2.0-33645000865OAI: oai:DiVA.org:kth-15187DiVA: diva2:333228
QC 201005252010-08-052010-08-05Bibliographically approved