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Comparison of performance of n- and p-type spin transistors with conventional transistors
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Optics and Photonics.
2005 (English)In: Journal of Superconductivity, ISSN 0896-1107, E-ISSN 1572-9605, Vol. 18, no 3, 349-356 p.Article in journal (Refereed) Published
Abstract [en]

A spintronic device that has stimulated much research interest is the Datta-Das spin transistor. The mechanism behind it called the Rashba effect is that an applied voltage gives rise to a spin splitting. We propose ways to optimize this effect. The relevant spin splitting in k-space is predicted to increase with electric field at a rate that is more than two orders of magnitude larger for holes than for electrons. Furthermore, the almost negligible lattice-mismatch between GaAs and AlGaAs can be used to further enhance the advantage of hole-based spin transistors. Compared to present transistors we conclude that electron-based spin transistors will have problems to become competitive but hole-based ones are much more promising.

Place, publisher, year, edition, pages
2005. Vol. 18, no 3, 349-356 p.
Keyword [en]
spintronics, transistor, quantum well, spin splitting, hole subband, asymmetric quantum-wells, semiconductors, electron, heterostructure, microstructures, approximation, orientation, spintronics, injection, layers
Identifiers
URN: urn:nbn:se:kth:diva-15187DOI: 10.1007/s10948-005-0009-yISI: 000233398900009Scopus ID: 2-s2.0-33645000865OAI: oai:DiVA.org:kth-15187DiVA: diva2:333228
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05Bibliographically approved

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