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Annealing study of Sb+ and Al+ ion-implanted ZnO
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-8760-1137
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2005 (English)In: Superlattices and Microstructures, ISSN 0749-6036, E-ISSN 1096-3677, Vol. 38, no 4-6, p. 464-471Article in journal (Refereed) Published
Abstract [en]

In this work we have studied diffusion and electrical activation in Al+ and Sb+ implanted ZnO samples using secondary ion mass spectrometry (SIMS), scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM). The samples were hydrothermally grown and post-implant annealing was performed at 800, 900 and 1000 degrees C in pure oxygen atmosphere, After each annealing step the samples were characterized with SSRM/SCM and SIMS. The thermal treatments did not induce any significant impurity redistribution as measured by SIMS, while electrical compensation is observed by SSRM/SCM for the Sb-implanted sample yielding less n-doping than in the as-grown samples. In the Al-implanted samples, an increase in carrier concentration is observed; we ascribe this to Al-related donors and possibly interstitial lithium, a common residual impurity in the samples that have been shown to be very mobile by SIMS.

Place, publisher, year, edition, pages
2005. Vol. 38, no 4-6, p. 464-471
Keyword [en]
scanning capacitance microscopy, films
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Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-15220DOI: 10.1016/j.spmi.2005.08.017ISI: 000233651800029Scopus ID: 2-s2.0-33644541418OAI: oai:DiVA.org:kth-15220DiVA, id: diva2:333261
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QC 20100525 QC 20111012Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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Hallén, Anders.

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