Annealing study of Sb+ and Al+ ion-implanted ZnO
2005 (English)In: Superlattices and Microstructures, ISSN 0749-6036, E-ISSN 1096-3677, Vol. 38, no 4-6, 464-471 p.Article in journal (Refereed) Published
In this work we have studied diffusion and electrical activation in Al+ and Sb+ implanted ZnO samples using secondary ion mass spectrometry (SIMS), scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM). The samples were hydrothermally grown and post-implant annealing was performed at 800, 900 and 1000 degrees C in pure oxygen atmosphere, After each annealing step the samples were characterized with SSRM/SCM and SIMS. The thermal treatments did not induce any significant impurity redistribution as measured by SIMS, while electrical compensation is observed by SSRM/SCM for the Sb-implanted sample yielding less n-doping than in the as-grown samples. In the Al-implanted samples, an increase in carrier concentration is observed; we ascribe this to Al-related donors and possibly interstitial lithium, a common residual impurity in the samples that have been shown to be very mobile by SIMS.
Place, publisher, year, edition, pages
2005. Vol. 38, no 4-6, 464-471 p.
scanning capacitance microscopy, films
IdentifiersURN: urn:nbn:se:kth:diva-15220DOI: 10.1016/j.spmi.2005.08.017ISI: 000233651800029ScopusID: 2-s2.0-33644541418OAI: oai:DiVA.org:kth-15220DiVA: diva2:333261
QC 20100525 QC 201110122010-08-052010-08-052011-10-12Bibliographically approved