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Boron distribution in silicon after excimer laser annealing with multiple pulses
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.ORCID iD: 0000-0002-0292-224X
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2005 (English)In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 124, 228-231 p.Article in journal (Refereed) Published
Abstract [en]

We have studied B re-distribution in Si after excimer laser annealing (ELA) with multiple laser pulses. B was implanted using both B and BF2 ions with energies from 1 to 20 keV and doses of 1 x 10(14) and 1 x 10(15) cm(-2). ELA with the number of pulses from 1 to 100 was performed in vacuum with the sample kept at room temperature and 450 degrees C. Independently of the implantation parameters and the ELA conditions used, a peak in the B concentration is observed near the maximum melting depth after 10 pulses of ELA. A detailed study has revealed that B accumulates at the maximum melt depth gradually with the number of ELA pulses. An increase in the carrier concentration at the maximum melt depth is observed after ELA with 100 pulses. No structural defects have been detected by transmission electron microscopy in the region of the B accumulation.

Place, publisher, year, edition, pages
2005. Vol. 124, 228-231 p.
Keyword [en]
ELA, boron, silicon, energy implanted boron, electrical activation, redistribution, diffusion, dopants
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-15246DOI: 10.1016/j.mseb.2005.08.058ISI: 000233895800042Scopus ID: 2-s2.0-27844450980OAI: oai:DiVA.org:kth-15246DiVA: diva2:333287
Note
QC 20100525 QC 20111012Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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Linnarsson, Margareta K.

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CiteExportLink to record
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  • apa
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  • de-DE
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