Boron distribution in silicon after excimer laser annealing with multiple pulses
2005 (English)In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, Vol. 124, 228-231 p.Article in journal (Refereed) Published
We have studied B re-distribution in Si after excimer laser annealing (ELA) with multiple laser pulses. B was implanted using both B and BF2 ions with energies from 1 to 20 keV and doses of 1 x 10(14) and 1 x 10(15) cm(-2). ELA with the number of pulses from 1 to 100 was performed in vacuum with the sample kept at room temperature and 450 degrees C. Independently of the implantation parameters and the ELA conditions used, a peak in the B concentration is observed near the maximum melting depth after 10 pulses of ELA. A detailed study has revealed that B accumulates at the maximum melt depth gradually with the number of ELA pulses. An increase in the carrier concentration at the maximum melt depth is observed after ELA with 100 pulses. No structural defects have been detected by transmission electron microscopy in the region of the B accumulation.
Place, publisher, year, edition, pages
2005. Vol. 124, 228-231 p.
ELA, boron, silicon, energy implanted boron, electrical activation, redistribution, diffusion, dopants
IdentifiersURN: urn:nbn:se:kth:diva-15246DOI: 10.1016/j.mseb.2005.08.058ISI: 000233895800042ScopusID: 2-s2.0-27844450980OAI: oai:DiVA.org:kth-15246DiVA: diva2:333287
QC 20100525 QC 201110122010-08-052010-08-052011-10-12Bibliographically approved