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Excimer laser annealing of B and BF2 implanted Si
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.ORCID iD: 0000-0002-0292-224X
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2005 (English)In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 124, 232-234 p.Article in journal (Refereed) Published
Abstract [en]

We have performed a comparative study of B re-distribution and electrical activation after excimer laser annealing (ELA) of B and BF2 implanted Si. Chemical B concentration and electrical activation profiles were measured by secondary ion mass spectrometry (SIMS) and spreading resistance profiling (SRP), respectively. SIMS data demonstrate that the presence of F does not influence significantly the re-distribution of B during ELA. A dramatic contrast, however, can be observed in the electrical activation of the dopant in the B and BF2 implanted samples. While almost 100% electrical activation of B occurs in the B implanted samples, only 20-50% of the dopant can be activated by ELA in the BF2 implanted sample. Possible mechanisms causing the deactivation of B in the BF2 implanted samples after ELA are discussed.

Place, publisher, year, edition, pages
2005. Vol. 124, 232-234 p.
Keyword [en]
excimer laser annealing, BF2 implanted Si, dopant activation, silicon, boron, redistribution, diffusion, dopants
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-15247DOI: 10.1016/j.mseb.2005.08.059ISI: 000233895800043Scopus ID: 2-s2.0-27844483811OAI: oai:DiVA.org:kth-15247DiVA: diva2:333288
Note
QC 20100525 QC 20111012Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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Linnarsson, Margareta K.

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