Excimer laser annealing of B and BF2 implanted Si
2005 (English)In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, Vol. 124, 232-234 p.Article in journal (Refereed) Published
We have performed a comparative study of B re-distribution and electrical activation after excimer laser annealing (ELA) of B and BF2 implanted Si. Chemical B concentration and electrical activation profiles were measured by secondary ion mass spectrometry (SIMS) and spreading resistance profiling (SRP), respectively. SIMS data demonstrate that the presence of F does not influence significantly the re-distribution of B during ELA. A dramatic contrast, however, can be observed in the electrical activation of the dopant in the B and BF2 implanted samples. While almost 100% electrical activation of B occurs in the B implanted samples, only 20-50% of the dopant can be activated by ELA in the BF2 implanted sample. Possible mechanisms causing the deactivation of B in the BF2 implanted samples after ELA are discussed.
Place, publisher, year, edition, pages
2005. Vol. 124, 232-234 p.
excimer laser annealing, BF2 implanted Si, dopant activation, silicon, boron, redistribution, diffusion, dopants
IdentifiersURN: urn:nbn:se:kth:diva-15247DOI: 10.1016/j.mseb.2005.08.059ISI: 000233895800043ScopusID: 2-s2.0-27844483811OAI: oai:DiVA.org:kth-15247DiVA: diva2:333288
QC 20100525 QC 201110122010-08-052010-08-052011-10-12Bibliographically approved