Piezoelectric activity in c-axis oriented LiNbO3/ZnO bilayers grown by laser ablation technique
2005 (English)In: Ferroelectrics (Print), ISSN 0015-0193, Vol. 329, 969-972 p.Article in journal (Refereed) Published
LiNbO3/ZnO multi-layer with a preferred c-axis orientation has been grown on glass and SiO2/Si substrates by laser ablation technique. The piezoelectric activity in as deposited films is demonstrated using a novel approach to the atomic force microscope. In the presence of an in plane low frequency (0.1 to 5 Hz) ac electric field, we monitor and image the induced piezoelectric response normal to the film plane between two electrodes.
Place, publisher, year, edition, pages
2005. Vol. 329, 969-972 p.
piezoelectricity, thin films, laser ablation, films
IdentifiersURN: urn:nbn:se:kth:diva-15283DOI: 10.1080/00150190500315467ISI: 000234251200012ScopusID: 2-s2.0-33751260903OAI: oai:DiVA.org:kth-15283DiVA: diva2:333324
QC 20100525 QC 201110132010-08-052010-08-052011-10-13Bibliographically approved