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Piezoelectric activity in c-axis oriented LiNbO3/ZnO bilayers grown by laser ablation technique
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Engineering Material Physics.ORCID iD: 0000-0003-4889-4210
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering.
2005 (English)In: Ferroelectrics (Print), ISSN 0015-0193, E-ISSN 1563-5112, Vol. 329, 969-972 p.Article in journal (Refereed) Published
Abstract [en]

LiNbO3/ZnO multi-layer with a preferred c-axis orientation has been grown on glass and SiO2/Si substrates by laser ablation technique. The piezoelectric activity in as deposited films is demonstrated using a novel approach to the atomic force microscope. In the presence of an in plane low frequency (0.1 to 5 Hz) ac electric field, we monitor and image the induced piezoelectric response normal to the film plane between two electrodes.

Place, publisher, year, edition, pages
2005. Vol. 329, 969-972 p.
Keyword [en]
piezoelectricity, thin films, laser ablation, films
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-15283DOI: 10.1080/00150190500315467ISI: 000234251200012Scopus ID: 2-s2.0-33751260903OAI: oai:DiVA.org:kth-15283DiVA: diva2:333324
Note
QC 20100525 QC 20111013Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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Belova, Lyubov M.

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