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Photocatalytic behavior of TiO2 thin films prepared by sol-gel process
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering.
2006 (English)In: Materials Chemistry and Physics, ISSN 0254-0584, Vol. 95, no 1, 79-83 p.Article in journal (Refereed) Published
Abstract [en]

Titanium dioxide solution was prepared via sol-gel process with and without acetyl acetone (AcAc). The formation of the anatase phase in the thin films using AcAc was initiated at 300 degrees C while the anatase phase in the thin films without using AcAc began to appear at 100 degrees C. Surface roughness of the TiO2 films using and without using AcAc ranged from 0.414 to 3.08 nm and from 3.72 to 5.35 nm, respectively. Photocatalytic decomposition rate examined by methylene blue solution showed 80% at 400 degrees C and 88% at 600 degrees C for the TiO2 thin films using AcAc. On the other hand, the photocatalytic decomposition rate of the TiO2 thin films without using AcAc showed 80% at 100 degrees C and 97% at 400 degrees C, respectively. At the temperature above 400 degrees C, the photocatalytic activity decreased due to appearance of the rutile phase. Comparison between the TiO2 thin films showing the maximum photocatalytic activity revealed that the TiO2 thin film without using AcAc showed 10% higher photocatalytic decomposition rate from the initial 10 to 120 min as compared with the TiO2 thin film using AcAc, which was closely related to the formation of the anatase phase and the surface roughness.

Place, publisher, year, edition, pages
2006. Vol. 95, no 1, 79-83 p.
Keyword [en]
thin films, sol-gel growth, atomic force microscopy, photoactivity, metal-oxides, tio2-sio2
Identifiers
URN: urn:nbn:se:kth:diva-15345DOI: 10.1016/j.matchemphys.2005.06.001ISI: 000232813500013ScopusID: 2-s2.0-26444525628OAI: oai:DiVA.org:kth-15345DiVA: diva2:333386
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05Bibliographically approved

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Muhammed, Mamoun
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