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Recombination-induced stacking faults: Evidence for a general mechanism in hexagonal SiC
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-5260-5322
2006 (English)In: Physical Review Letters, ISSN 0031-9007, E-ISSN 1079-7114, Vol. 96, no 2Article in journal (Refereed) Published
Abstract [en]

We report on optically induced nucleation and expansion of stacking faults in hexagonal SiC structures. The activation energy for partial dislocation glide under optical excitation is found to reduce to 0.25 +/- 0.05 eV, which is about 2 eV lower than for pure thermal activation. From the measurements of thermal activation and below-gap excitation spectroscopy of dislocation glide, we conclude that the elementary process controlling expansion of stacking faults is kink pair nucleation aided by the phonon-kick mechanism. We propose that solitons on 30 degrees Si(g) partials with a silicon core act as deep 2.4 eV+E-V trap sites, readily providing electron-hole recombination energy to enhance the motion of dislocations. Our results suggest that this is a general mechanism of structural degradation in hexagonal SiC.

Place, publisher, year, edition, pages
2006. Vol. 96, no 2
Keyword [en]
i-n-diodes, defect reactions, semiconductors, dislocations, silicon, mobility
Identifiers
URN: urn:nbn:se:kth:diva-15381DOI: 10.1103/PhysRevLett.96.025502ISI: 000234758100049Scopus ID: 2-s2.0-32844471245OAI: oai:DiVA.org:kth-15381DiVA: diva2:333422
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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Linnros, Jan

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