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Visualization of MeV ion impacts in Si using scanning capacitance microscopy
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2006 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 73, no 8Article in journal (Refereed) Published
Abstract [en]

Scanning capacitance microscopy (SCM) of 3 MeV Au2+ ion implanted Si have been performed for doses between 2x10(8) and 5x10(9) cm(-2). The measurements show a random pattern of reduced SCM signal (charge trapping) correlated with the ion impacts. These features have a lateral dimension of 150-600 nm and reveal a pronounced dose dependence. It is argued that the Fermi level near the impacts and along the ion tracks is modified (pinned) due to deep acceptor states formed by the penetrating ions. Substantial evidence for this argument is provided by SCM images obtained at different temperatures, where a strong correlation is revealed between the probing frequency and the emission rate of the single negative acceptor level of divacancy. To the best of our knowledge, this is a direct observation of signatures for individual ion impacts in Si by an electrical scanning technique.

Place, publisher, year, edition, pages
2006. Vol. 73, no 8
Keyword [en]
electron-microscopy, collision cascades, latent tracks, heavy-ions, silicon, defects, irradiation, damage, films, gaas
Identifiers
URN: urn:nbn:se:kth:diva-15473DOI: 10.1103/PhysRevB.73.085312ISI: 000235669100056Scopus ID: 2-s2.0-33244462157OAI: oai:DiVA.org:kth-15473DiVA: diva2:333514
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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Hallén, Anders.

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