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Superefficient electric-field-induced spin-orbit splitting in strained p-type quantum wells
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
2006 (English)In: Europhysics letters, ISSN 0295-5075, E-ISSN 1286-4854, Vol. 73, no 6, 927-933 p.Article in journal (Refereed) Published
Abstract [en]

We investigate theoretically the efficiency of the Rashba effect, i.e. the spin-orbit splitting resulting from an electric field. In contrast to previous studies, where the carriers have usually been taken to be electrons, we focus on holes and are able to demonstrate remarkable improvements of the effect by several orders of magnitude. We also show that the frequently-neglected lattice-mismatch between GaAs and AlGaAs can be used to further enhance the efficiency of the wave vector splitting mechanism. The Rashba effect is the fundamental mechanism behind the Datta-Das spin transistor and we find that for a small electric field of 2 kV/cm the spin precession length becomes only 36nm.

Place, publisher, year, edition, pages
2006. Vol. 73, no 6, 927-933 p.
Keyword [en]
semiconductor heterostructures, inversion asymmetry, approximation, spintronics, injection, systems
Identifiers
URN: urn:nbn:se:kth:diva-15492DOI: 10.1209/epl/i2005-10482-6ISI: 000235778100018Scopus ID: 2-s2.0-33645150903OAI: oai:DiVA.org:kth-15492DiVA: diva2:333533
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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Ekenberg, Ulf
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