All-around contact for carbon nanotube field-effect transistors made by ac dielectrophoresis
2006 (English)In: Journal of Vacuum Science & Technology B, ISSN 1071-1023, E-ISSN 1520-8567, Vol. 24, no 1, 131-135 p.Article in journal (Refereed) Published
Carbon nanotube field-effect transistors (CNFETs) are fabricated by depositing one bundle of sinole-walled carbon nanotubes (SWNTs) per device between a pair of predefined Pd electrodes using ac dielectrophoresis. By repeating the process for the formation of the Pd electrodes after the bundle deposition, all-around Pd contacts are made to the SWNT bundles. After the formation of all-around contact, the CNFETs with only semiconducting SWNTs in the bundles retain a strong a 106,ate modulation with a high ratio of on to off current I-on/I-off For the CNFETs with at least one metallic SWNT in the bundles, their gate modulation disappears and carbon nanotube resistors (CNRs) are obtained. The on current I-on of CNFETs is found to be sensitive to the process for the formation of all-around contact. In contrast, the two-probe resistance of CNRs is consistently reduced after the all-around contacts. The electrical measurements also indicate the presence of an interlayer residing at the SWNT/Pd contacts.
Place, publisher, year, edition, pages
2006. Vol. 24, no 1, 131-135 p.
electronics, transport, bundles
IdentifiersURN: urn:nbn:se:kth:diva-15498DOI: 10.1116/1.2150226ISI: 000235845900022ScopusID: 2-s2.0-31544443008OAI: oai:DiVA.org:kth-15498DiVA: diva2:333539
QC 201005252010-08-052010-08-05Bibliographically approved