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All-around contact for carbon nanotube field-effect transistors made by ac dielectrophoresis
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
2006 (English)In: Journal of Vacuum Science & Technology B, ISSN 1071-1023, E-ISSN 1520-8567, Vol. 24, no 1, 131-135 p.Article in journal (Refereed) Published
Abstract [en]

Carbon nanotube field-effect transistors (CNFETs) are fabricated by depositing one bundle of sinole-walled carbon nanotubes (SWNTs) per device between a pair of predefined Pd electrodes using ac dielectrophoresis. By repeating the process for the formation of the Pd electrodes after the bundle deposition, all-around Pd contacts are made to the SWNT bundles. After the formation of all-around contact, the CNFETs with only semiconducting SWNTs in the bundles retain a strong a 106,ate modulation with a high ratio of on to off current I-on/I-off For the CNFETs with at least one metallic SWNT in the bundles, their gate modulation disappears and carbon nanotube resistors (CNRs) are obtained. The on current I-on of CNFETs is found to be sensitive to the process for the formation of all-around contact. In contrast, the two-probe resistance of CNRs is consistently reduced after the all-around contacts. The electrical measurements also indicate the presence of an interlayer residing at the SWNT/Pd contacts.

Place, publisher, year, edition, pages
2006. Vol. 24, no 1, 131-135 p.
Keyword [en]
electronics, transport, bundles
Identifiers
URN: urn:nbn:se:kth:diva-15498DOI: 10.1116/1.2150226ISI: 000235845900022Scopus ID: 2-s2.0-31544443008OAI: oai:DiVA.org:kth-15498DiVA: diva2:333539
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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CiteExportLink to record
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