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Electronic properties of intrinsic and heavily doped AlN and GaN
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Applied Material Physics.ORCID iD: 0000-0002-9050-5445
2006 (English)In: Journal de Physique IV: Colloque, ISSN 1155-4339, E-ISSN 1764-7177, Vol. 132, 105-110 p.Article in journal (Refereed) Published
Abstract [en]

We present a theoretical study of the electronic structure, optical properties, and the effective masses of AlN and GaN based on the local density approximation (LDA) within the density functional theory (DFT), employing the first-principles, full-potential linearized augmented plane wave method. We also describe the effects on the electronic properties of the semiconductors due to heavily n- and p-type doping. The critical concentration N-c for the doping-induced metal-nonmetal (MNM) transition in both n- and p-type is calculated.

Place, publisher, year, edition, pages
2006. Vol. 132, 105-110 p.
Keyword [en]
band-gap, hexagonal gan, wurtzite inn, approximation, zincblende, systems
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-15585DOI: 10.1051/jp4:2006132021ISI: 000236598300021Scopus ID: 2-s2.0-33744939445OAI: oai:DiVA.org:kth-15585DiVA: diva2:333626
Note
QC 20100525 QC 20111003. Conference: 10th International Conference on the Formation of Semiconductor Interfaces. Univ Paul Cezanne, Aix en Provence, FRANCE. JUL 03-08, 2005Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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Persson, Clas

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