Electronic properties of intrinsic and heavily doped AlN and GaN
2006 (English)In: Journal de Physique IV: Colloque, ISSN 1155-4339, Vol. 132, 105-110 p.Article in journal (Refereed) Published
We present a theoretical study of the electronic structure, optical properties, and the effective masses of AlN and GaN based on the local density approximation (LDA) within the density functional theory (DFT), employing the first-principles, full-potential linearized augmented plane wave method. We also describe the effects on the electronic properties of the semiconductors due to heavily n- and p-type doping. The critical concentration N-c for the doping-induced metal-nonmetal (MNM) transition in both n- and p-type is calculated.
Place, publisher, year, edition, pages
2006. Vol. 132, 105-110 p.
band-gap, hexagonal gan, wurtzite inn, approximation, zincblende, systems
IdentifiersURN: urn:nbn:se:kth:diva-15585DOI: 10.1051/jp4:2006132021ISI: 000236598300021ScopusID: 2-s2.0-33744939445OAI: oai:DiVA.org:kth-15585DiVA: diva2:333626
QC 20100525 QC 20111003. Conference: 10th International Conference on the Formation of Semiconductor Interfaces. Univ Paul Cezanne, Aix en Provence, FRANCE. JUL 03-08, 20052010-08-052010-08-052011-10-03Bibliographically approved