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Diode effect in asymmetric double-tunnel barriers with single-metal nanoclusters
KTH, School of Engineering Sciences (SCI), Applied Physics, Nanostructure Physics.ORCID iD: 0000-0001-8534-6577
KTH, School of Engineering Sciences (SCI), Applied Physics, Nanostructure Physics.ORCID iD: 0000-0003-2339-1692
2006 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 88, no 16Article in journal (Refereed) Published
Abstract [en]

Asymmetric double-tunnel barriers with the center electrode being a metal cluster in the quantum regime are studied. The zero dimensionality of the clusters used and the associated quantized energy spectra are manifest in well-defined steps in the current-voltage characteristic. Record high current rectification ratios of similar to 10(4) for tunneling through such clusters are demonstrated at room temperature. We are able to account for all of the experimentally observed features by modeling our double-barrier structures using a combination of discrete states and charging effects for tunneling through quantum dots.

Place, publisher, year, edition, pages
2006. Vol. 88, no 16
Keyword [en]
nanoparticles, particles, transport, junctions, memory
Identifiers
URN: urn:nbn:se:kth:diva-15625DOI: 10.1063/1.2195643ISI: 000236969300103Scopus ID: 2-s2.0-33646198831OAI: oai:DiVA.org:kth-15625DiVA: diva2:333667
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05Bibliographically approved

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Haviland, David B.Korenivski, Vladislav

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