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Vacancy-impurity pairs in relaxed Si1-xGex layers studied by positron annihilation spectroscopy
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2006 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 73, no 16Article in journal (Refereed) Published
Abstract [en]

Positron annihilation spectroscopy was applied to study relaxed P-doped n-type and undoped Si1-xGex layers with x up to 0.30. The as-grown SiGe layers were found to be defect free and annihilation parameters in a random SiGe alloy could be represented as superpositions of annihilations in bulk Si and Ge. A 2 MeV proton irradiation with a 1.6x10(15) cm(-2) fluence was used to produce saturated positron trapping in monovacancy related defects in the n-type layers. The defects were identified as V-P pairs, the E center. The distribution of Si and Ge atoms surrounding the E center was the same as in the host lattice. The process leading to the formation of V-P pairs therefore does not seem to have a significant preference for either Si or Ge atoms. In undoped Si1-xGex we find that a similar irradiation produces a low concentration of divacancies or larger vacancy defects and found no evidence of monovacancies surrounded by several Ge atoms.

Place, publisher, year, edition, pages
2006. Vol. 73, no 16
Keyword [en]
irradiation-induced defects, alloys, silicon, si, divacancy, germanium, density, solids
URN: urn:nbn:se:kth:diva-15645DOI: 10.1103/PhysRevB.73.165209ISI: 000237155800050ScopusID: 2-s2.0-33645769041OAI: diva2:333687
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2011-10-04Bibliographically approved

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Hållstedt, Julius
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Microelectronics and Information Technology, IMIT
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