Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Vacancy-impurity pairs in relaxed Si1-xGex layers studied by positron annihilation spectroscopy
Show others and affiliations
2006 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 73, no 16Article in journal (Refereed) Published
Abstract [en]

Positron annihilation spectroscopy was applied to study relaxed P-doped n-type and undoped Si1-xGex layers with x up to 0.30. The as-grown SiGe layers were found to be defect free and annihilation parameters in a random SiGe alloy could be represented as superpositions of annihilations in bulk Si and Ge. A 2 MeV proton irradiation with a 1.6x10(15) cm(-2) fluence was used to produce saturated positron trapping in monovacancy related defects in the n-type layers. The defects were identified as V-P pairs, the E center. The distribution of Si and Ge atoms surrounding the E center was the same as in the host lattice. The process leading to the formation of V-P pairs therefore does not seem to have a significant preference for either Si or Ge atoms. In undoped Si1-xGex we find that a similar irradiation produces a low concentration of divacancies or larger vacancy defects and found no evidence of monovacancies surrounded by several Ge atoms.

Place, publisher, year, edition, pages
2006. Vol. 73, no 16
Keyword [en]
irradiation-induced defects, alloys, silicon, si, divacancy, germanium, density, solids
Identifiers
URN: urn:nbn:se:kth:diva-15645DOI: 10.1103/PhysRevB.73.165209ISI: 000237155800050Scopus ID: 2-s2.0-33645769041OAI: oai:DiVA.org:kth-15645DiVA: diva2:333687
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2011-10-04Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Hållstedt, Julius
By organisation
Microelectronics and Information Technology, IMIT
In the same journal
Physical Review B. Condensed Matter and Materials Physics

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 37 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf