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GaBiAs: A material for optoelectronic terahertz devices
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2006 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 88, no 20Article in journal (Refereed) Published
Abstract [en]

GaBiAs layers have been grown by molecular beam epitaxy at low (270-330 degrees C) temperatures and were characterized by several experimental techniques. It was shown that the spectral photosensitivity cutoff wavelength reaches similar to 1.4 mu m when the growth temperature is as low as 280 degrees C. Optical pump-terahertz probe measurements made on these layers have evidenced that the electron trapping time decreases with decreasing growth temperature from 20 to about 1 ps. GaBiAs layers were used for manufacturing photoconductive terahertz emitters and detectors, which, when excited with Ti:sapphire laser pulses, have demonstrated a signal bandwidth of 3 THz.

Place, publisher, year, edition, pages
2006. Vol. 88, no 20
Keyword [en]
molecular-beam epitaxy, gaas1-xbix
Identifiers
URN: urn:nbn:se:kth:diva-15688DOI: 10.1063/1.2205180ISI: 000237682100012Scopus ID: 2-s2.0-33646872435OAI: oai:DiVA.org:kth-15688DiVA: diva2:333730
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05Bibliographically approved

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Marcinkevicius, Saulius

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