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Beyond the Rashba model
KTH, School of Information and Communication Technology (ICT), Optics and Photonics.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
2006 (English)In: Physica. E, Low-Dimensional systems and nanostructures, ISSN 1386-9477, E-ISSN 1873-1759, Vol. 32, no 02-jan, 458-461 p.Article in journal (Refereed) Published
Abstract [en]

We analyze some common approximations made in connection with the Rashba effect, where a macroscopic electric field gives rise to a spin splitting. We demonstrate that the size of the Rashba splitting is not given by the expectation value of the electric field or some other average electric field, as is commonly assumed. Instead we find that the local electric field near an interface of a wide asymmetric modulation-doped quantum well can give rise to a Rashba splitting that is an order of magnitude larger than expected from the average electric field. The localization of the wave functions of the spin subbands can be quite sensitive to the parallel wave vector. Clear deviations from an energy-independent wave vector splitting occur when nonparabolicity is taken into account.

Place, publisher, year, edition, pages
2006. Vol. 32, no 02-jan, 458-461 p.
Keyword [en]
spin splitting, Rashba model, modulation doping, quantum well, microstructures
National Category
Physical Sciences
URN: urn:nbn:se:kth:diva-15704DOI: 10.1016/j.physe.2005.12.088ISI: 000237842200117ScopusID: 2-s2.0-33646198205OAI: diva2:333746
QC 20100525 QC 20111004. Conference: 12th International Conference on Modulated Semiconductor Structures (MSS12). Albuquerque, NM. JUL 10-15, 2005.Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2012-03-20Bibliographically approved

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Gvozdic, Dejan M.Ekenberg, Ulf
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