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Strained InGaAs quantum well vertical cavity surface emitting lasers emitting at 1.3 mu m
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2006 (English)In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 42, no 10, 584-586 p.Article in journal (Refereed) Published
Abstract [en]

Results on strained InGaAs quantum well vertical cavity surface emitting lasers for optical interconnection applications are reported. Fundamental mode continuous-wave lasing at wavelengths beyond 1300 nm is demonstrated at room temperature. The metal-organic vapour-phase epitaxy grown structure was processed as top p-type distribute Bragg reflector oxide-confined devices.

Place, publisher, year, edition, pages
2006. Vol. 42, no 10, 584-586 p.
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URN: urn:nbn:se:kth:diva-15746DOI: 10.1049/el:20060060ISI: 000238278300018Scopus ID: 2-s2.0-33646714879OAI: oai:DiVA.org:kth-15746DiVA: diva2:333788
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05Bibliographically approved

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Hammar, Mattias

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