Adsorption of Cs on InAs(111) surfaces
2006 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 252, no 15, 5267-5270 p.Article in journal (Refereed) Published
Caesiated InAs(111)B (1 x 1) and InAs(111)A (2 x 2) surfaces have been studied by photoelectron spectroscopy. On the InAs(111)B a new (root 3 x root 3)R30 degrees reconstruction was observed. During Cs evaporation remarkably small changes are observed in the lone pair states, and no sign of an accumulation layer at the surface can be observed. Instead, the additional charge provided by Cs is rapidly transported towards the bulk. On the InAs(111)A cesium behaves as a typical electropositive alkali metal donator that enhances the already existing accumulation layer.
Place, publisher, year, edition, pages
2006. Vol. 252, no 15, 5267-5270 p.
adatoms, indium arsenide, Cs, photoemission, 2DEG, photoemission, spectroscopy, accumulation, states, layer
Materials Chemistry Materials Engineering
IdentifiersURN: urn:nbn:se:kth:diva-15783DOI: 10.1016/j.apsusc.2005.12.065ISI: 000238623300007ScopusID: 2-s2.0-33746963487OAI: oai:DiVA.org:kth-15783DiVA: diva2:333825
QC 20100525 QC 20111004. Conference: 8th International Conference on Atomically Controlled Surfaces, Interfaces, and Nanostructures/13th International Congress on Thin Films. Stockholm, SWEDEN. JUN 20-23, 2005 2010-08-052010-08-052011-10-04Bibliographically approved