Formation of precipitates in heavily boron doped 4H-SiC
2006 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 252, no 15, 5316-5320 p.Article in journal (Refereed) Published
Secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM) are utilized to study precipitation and the solubility of B in 4H-SiC epitaxial layers super saturated with B. Heat treatments are performed in Ar atmosphere in an rf-heated furnace at temperatures between 1700 and 2000 degrees C. SIMS ion images, and TEM micrographs reveal the formation of two types of precipitates where the larger, more thermally stable one is suggested to be B4C. The boron solubility is determined from SIMS depth profiles and is shown to follow the Arrhenius expression: 7.1 x 10(22) exp(-1.4 eV/k(B)T) cm(-3) over the studied temperature range.
Place, publisher, year, edition, pages
2006. Vol. 252, no 15, 5316-5320 p.
SIMS, TEM, SiC, B, solubility limit, precipitates, silicon-carbide, diffusion, epitaxy
Materials Engineering Materials Chemistry
IdentifiersURN: urn:nbn:se:kth:diva-15785DOI: 10.1016/j.apsusc.2005.12.024ISI: 000238623300019ScopusID: 2-s2.0-33744532107OAI: oai:DiVA.org:kth-15785DiVA: diva2:333827
QC 20100525 QC 20111004. QC 20150626, Conference: 8th International Conference on Atomically Controlled Surfaces, Interfaces, and Nanostructures/13th International Congress on Thin Films. Stockholm, SWEDEN. JUN 20-23, 20052010-08-052010-08-052015-06-26Bibliographically approved