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Formation of precipitates in heavily boron doped 4H-SiC
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.ORCID iD: 0000-0002-0292-224X
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.ORCID iD: 0000-0002-4148-5679
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2006 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 252, no 15, 5316-5320 p.Article in journal (Refereed) Published
Abstract [en]

Secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM) are utilized to study precipitation and the solubility of B in 4H-SiC epitaxial layers super saturated with B. Heat treatments are performed in Ar atmosphere in an rf-heated furnace at temperatures between 1700 and 2000 degrees C. SIMS ion images, and TEM micrographs reveal the formation of two types of precipitates where the larger, more thermally stable one is suggested to be B4C. The boron solubility is determined from SIMS depth profiles and is shown to follow the Arrhenius expression: 7.1 x 10(22) exp(-1.4 eV/k(B)T) cm(-3) over the studied temperature range.

Place, publisher, year, edition, pages
2006. Vol. 252, no 15, 5316-5320 p.
Keyword [en]
SIMS, TEM, SiC, B, solubility limit, precipitates, silicon-carbide, diffusion, epitaxy
National Category
Materials Engineering Materials Chemistry
Identifiers
URN: urn:nbn:se:kth:diva-15785DOI: 10.1016/j.apsusc.2005.12.024ISI: 000238623300019Scopus ID: 2-s2.0-33744532107OAI: oai:DiVA.org:kth-15785DiVA: diva2:333827
Note

QC 20100525 QC 20111004. QC 20150626,  Conference: 8th International Conference on Atomically Controlled Surfaces, Interfaces, and Nanostructures/13th International Congress on Thin Films. Stockholm, SWEDEN. JUN 20-23, 2005

Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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Linnarsson, Margareta K.Nordell, Nils

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Linnarsson, Margareta K.Janson, Martin S.Nordell, Nils
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Microelectronics and Applied Physics, MAPMicroelectronics and Information Technology, IMITElectrum Laboratory, ELAB
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