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Growth of boron nano-junctions
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
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2006 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 252, no 15, 5587-5589 p.Article in journal (Refereed) Published
Abstract [en]

In this work, we demonstrate the synthesis of various types of boron nanowire junctions in a self-assembled manner by simple closed-tube thermal vapor transfer method. The Y-type boron nano-junctions and lateral boron-silicon alloy nano-junctions were grown on Si substrates, based on the oxide assisted VLS growth mode at a relatively low processing temperature regime and the VLS growth mode at the high processing temperature regime, respectively.

Place, publisher, year, edition, pages
2006. Vol. 252, no 15, 5587-5589 p.
Keyword [en]
nano-junction, alloy, thermal vapor deposition, semiconductor
National Category
Materials Chemistry
Identifiers
URN: urn:nbn:se:kth:diva-15789DOI: 10.1016/j.apsusc.2005.12.013ISI: 000238623300084Scopus ID: 2-s2.0-33744513385OAI: oai:DiVA.org:kth-15789DiVA: diva2:333831
Note
QC 20100525 QC 20111004. Conference: 8th International Conference on Atomically Controlled Surfaces, Interfaces, and Nanostructures/13th International Congress on Thin Films. Stockholm, SWEDEN. JUN 20-23, 2005 Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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Karlsson, Ulf O.

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