Characterization of the crystalline quality of beta-SiC formed by ion beam synthesis
2006 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, Vol. 249, 851-855 p.Article in journal (Refereed) Published
The ion beam synthesis (IBS) technique is applied to form crystalline silicon carbide (SiC) for future optoelectronics applications. Carbon ions at 80 and 40 keV were implanted into (100) high-purity p-type silicon wafers at room temperature and 400 degrees C, respectively, to doses in excess of 10(17) ions/cm(2). Subsequent thermal annealing of the implanted samples was performed in a vacuum furnace at temperatures of 800, 900 and 1000 degrees C, respectively. Elastic recoil detection analysis was used to investigate depth distributions of the implanted ions and infrared transmittance (IR) measurement was used to characterize formation of SiC in the implanted Si substrate. Complementary to IR, Raman scattering measurements were also carried out. Levels of the residual damage distribution of the samples annealed at different temperatures were compared with that of the as-implanted one by Rutherford backscattering spectrometry (RBS) in the channeling mode. The results show that C-ion implantation at the elevated temperature, followed by high-temperature annealing, enhances the synthesis of crystalline SiC.
Place, publisher, year, edition, pages
2006. Vol. 249, 851-855 p.
ion beam synthesis (IBS), silicon, silicon carbide (SiC), infrared spectroscopy (IR), Raman spectroscopy, Rutherford backscattering spectrometry (RBS), spectroscopy, silicon, layers
Atom and Molecular Physics and Optics
IdentifiersURN: urn:nbn:se:kth:diva-15901DOI: 10.1016/j.nimb.2006.03.181ISI: 000239545000206ScopusID: 2-s2.0-33745827772OAI: oai:DiVA.org:kth-15901DiVA: diva2:333943
QC 20100525 QC 20110927. Conference: 17th International Conference on Ion Beam Analysis. Seville, SPAIN. JUN 26-JUL 01, 2005 2010-08-052010-08-052011-09-27Bibliographically approved